Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C
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TIM6472-16UL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz
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TIM6472-4SL
TIM6472-4UL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM6472-30UL
7-AA05A)
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TIM6472-30L
Abstract: No abstract text available
Text: TOSHIBA TIM6472-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 44.5 dBm at 6.4 GHz to 7.2 GHz
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TIM6472-30L
Pow25°
2-16G1B)
MW50950196
TIM6472-30L
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TIM6472-16UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C
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TIM6472-16UL
TIM6472-16UL
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TIM6472-6UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C
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TIM6472-6UL
TIM6472-6UL
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TIM6472-4UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C
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TIM6472-4UL
TIM6472-4UL
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TIM6472-25UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C
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TIM6472-25UL
TIM6472-25UL
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TIM6472-12UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM6472-12UL
TIM6472-12UL
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TIM6472-4UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM6472-4UL
TIM6472-4UL
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TIM6472-60SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level HIGH POWER P1dB=48.0dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=7.5dB at 6.4GHz to 7.2GHz
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TIM6472-60SL
IDS13
TIM6472-60SL
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TIM6472-8SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=7.5dB at 6.4GHz to 7.2GHz
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TIM6472-8SL
TIM6472-8SL
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TIM6472-16SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=7.0dB at 6.4GHz to 7.2GHz
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TIM6472-16SL
TIM6472-16SL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C
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TIM6472-6UL
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TIM6472-30SL
Abstract: PO43
Text: MICROWAVE POWER GaAs FET TIM6472-30SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=7.0dB at 6.4GHz to 7.2GHz
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TIM6472-30SL
TIM6472-30SL
PO43
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TIM6472-4UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM6472-4UL
TIM6472-4UL
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TIM6472-35SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz
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TIM6472-35SL
TIM6472-35SL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM6472-4UL
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TIM6472-4
Abstract: No abstract text available
Text: TOSHIBA TIM6472-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package
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TIM6472-4
2-11D1B)
MW50840196
TIM6472-4
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tim6472
Abstract: TIM6472-16L
Text: TOSHIBA TIM6472-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 6.4 GHz to 7.2 GHz
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TIM6472-16L
2-16G1B)
MW50930196
TIM6472-16L
tim6472
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50920-1
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package
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TIM6472-16
TIM6472-16
50920-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 dB c at Po = 28.5 dBm, - Single carrier level • High power - P idB = 39 dBm at 6.4 GHz to 7.2 GHz
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TIM6472-7L
2-11D1B)
at260
MW50870196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r
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TIM6472-4SL
2-11D1B)
MW50860196
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285-2 MAG IC
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM6472-8 TECHNICAL DATA FEATURES: • HIGH POWER P*|dB = 39 dBm at 6.4 GHz to 7.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GldB = 7.0 dB at 6.4 GHz to 7.2 GHz ■ HERMETICALLY SEALED PACKAGE
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TIM6472-8
TIM6472-8---------------------POWER
TIM6472-8
285-2 MAG IC
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