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    TC55V Price and Stock

    ARCOTEK TC55V1001AFTI-85L

    SRAM ASYNC SLOW 1M 128Kx8 3.3V 3
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    DigiKey TC55V1001AFTI-85L Reel 22,000
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    Toshiba America Electronic Components TC55V1001AFTI-10

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    Bristol Electronics TC55V1001AFTI-10 13,178
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    Quest Components TC55V1001AFTI-10 10,480
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    TC55V1001AFTI-10 507
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    Toshiba America Electronic Components TC55V1325FF-8

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    Bristol Electronics TC55V1325FF-8 1,803 3
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    Quest Components TC55V1325FF-8 19,375
    • 1 $2.125
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    TC55V1325FF-8 1,012
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    • 1000 $0.935
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    TC55V1325FF-8 388
    • 1 $3
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    • 1000 $0.975
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    Component Electronics, Inc TC55V1325FF-8 5,214
    • 1 $2.31
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    • 100 $1.73
    • 1000 $1.5
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    Toshiba America Electronic Components TC55V2325FF-7

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    Bristol Electronics TC55V2325FF-7 1,570
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    Component Electronics, Inc TC55V2325FF-7 1,160
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    Toshiba America Electronic Components TC55V16256FTI-15

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    Bristol Electronics TC55V16256FTI-15 1,019
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    Find more TC55V price and stock on Findchips.com

    TC55V Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V020FT-10 Toshiba 262,144 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V020FT-70 Toshiba 262,144 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V020TR Toshiba (TC55V020FT/TR) 8-Bit FULL CMOS SRAM Scan PDF
    TC55V040AFT Toshiba (TC55V040ATR/AFT) 8-Bit FULL CMOS SRAM Scan PDF
    TC55V040AFT-55 Toshiba 524,288 Word By 8 Bit Full CMOS Static RAM Original PDF
    TC55V040AFT-55 Toshiba 524,288-Word BY 8-BIT FULL CMOS STATIC RAM Original PDF
    TC55V040AFT-55 Toshiba Scan PDF
    TC55V040AFT-70 Toshiba 524,288 Word By 8 Bit Full CMOS Static RAM Original PDF
    TC55V040AFT-70 Toshiba 524,288-Word BY 8-BIT FULL CMOS STATIC RAM Original PDF
    TC55V040AFT-70 Toshiba Scan PDF
    TC55V040FT-10 Toshiba 524,288 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V040FT-10 Toshiba Scan PDF
    TC55V040FT-70 Toshiba 524,288 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V040FT-70 Toshiba Scan PDF
    TC55V040FT-85 Toshiba 524,288 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V040FT-85 Toshiba Scan PDF
    TC55V040TR Toshiba (TC55V040FT/TR) 8-Bit FULL CMOS SRAM Scan PDF
    TC55V040TR-10 Toshiba Scan PDF
    TC55V040TR-70 Toshiba Scan PDF
    TC55V040TR-85 Toshiba Scan PDF
    ...

    TC55V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TSOP48-P-1220-0

    Abstract: TC55VBM416AFTN TC55VBM416AFTN55
    Text: TC55VBM416AFTN55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words


    Original     		TC55VBM416AFTN55 576-WORD 16-BIT/2 152-WORD TC55VBM416AFTN 216-bit TSOP48-P-1220-0 TC55VBM416AFTN55 PDF

    TC55V400AFT-55

    Abstract: No abstract text available
    Text: TC55V400AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6


    Original     		TC55V400AFT-55 144-WORD 16-BIT TC55V400AFT 304-bit PDF

    TC55V040AFT

    Abstract: TC55V040AFT-55
    Text: TC55V040AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V


    Original     		TC55V040AFT-55 288-WORD TC55V040AFT 304-bit PDF

    TC55VD818FF-133

    Abstract: No abstract text available
    Text: TC55VD818FF-133,-143,-150 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VD818FF is a synchronous static random access memory SRAM organized as 524,288 words by 18


    Original     		TC55VD818FF-133 288-WORD 18-BIT TC55VD818FF PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst


    OCR Scan     		TC55V2325FF-100 TC55V2325FF 64KX32 LQFP100-P-1420-0 PDF

    260-pin

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		TC55V1864J/FT-10/12/15 TheTC55V1864J/FT TC55V1864J/FT TC55V1864J/ B-143 260-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55V-: 664J/FT TC55V1 B-135 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1403J/FT-15.-20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 1-BIT/1,048,576-WORD BY 4-BIT C M O S STATIC R A M DESCRIPTION The TC55V1403J/FT is a 4,194,304-bit high speed static random access memory SRAM , it is possible to


    OCR Scan     		TC55V1403J/FT-15 304-WORD 576-WORD TC55V1403J/FT 304-bit SOJ32-P-400-1 PII32-P-400-1 35MAX PDF

    bft10

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0 bft10 PDF

    TC55V4326FFI-150

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4326FFI-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4326FFI is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		TC55V4326FFI-150 072-WORD 32-BIT TC55V4326FFI 304-bit LQFP100-P-1420-0 PDF

    TC55V16176FF

    Abstract: TC55V16176FF-167
    Text: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		TC55V16176FF-167 576-WORD 18-BIT TC55V16176FF 368-bit LQFP100-P-1420-0 PDF

    TC55V16366FF-167

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		TC55V16366FF-167 288-WORD 36-BIT TC55V16366FF 368-bit LQFP100-P-1420-0 PDF

    TC55V16100FT-10

    Abstract: TC55V16100FT-12 TC55V16100FT-15
    Text: T O S H IB A TC55V16100FT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16100FT is a 16,777,216-bit high-speed static random access memory SRAM organized as 1,048,576 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide


    OCR Scan     		TC55V16100FT-10 576-WORD 16-BIT TC55V16100FT 216-bit 54-P-400-0 TC55V16100FT-12 TC55V16100FT-15 PDF

    TC55V4376FF

    Abstract: TC55V4376FF-100
    Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


    OCR Scan     		TC55V4376FF-100 072-WORD 36-BIT TC55V4376FF 592-bit LQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		TC55V040FT/TR-85 288-WORD TC55V040FT/TR 304-bit 40-P-1014-0 20adl PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC55V8512J/FT-12,-15.-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-W O R D BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288


    OCR Scan     		TC55V8512J/FT-12 TC55V8512J/FT 304-bit SOJ36-P-400-1 44-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V1664J-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan     		TC55V1664J-12 536-WORD 16-BIT TC55V1664J 576-bit SOJ44-P-400-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2001 F/FT/TR/ST/SR-85,-10,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001F/FT/TR/ST/SR is a 2,097,152-bit static random access memory SRAM organized as 262,144 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		TC55V2001 F/FT/TR/ST/SR-85 144-WORD TC55V2001F/FT/TR/ST/SR 152-bit 32-P-0820-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1864 J /FT -15 DATA SILICON GATE CMOS 65,536-WORD BY 18-BIT CMOS STATIC RAM DESCRIPTION The TC55V1864J/FT is a 1,179,648-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		TC55V1864 536-WORD 18-BIT TC55V1864J/FT 648-bit TC55V1864J/FTâ SOJ44-P-400) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as


    OCR Scan     		TC55V1664BJ/BFT-1Q 16-BIT TC55V1664BJ/BFT 10172M7 TC55V1664BJ/BFT-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		TC55V1001 F/FT/TR/ST/SR-85 072-WORD TC55V1001F/FT/TR/ST/SR 576-bit 775TYP 32-P-0820-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55VL818FF-75,-83 T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION ,288 words iles during except Output Enable OE and the Snooze pin ZZ are synchronized with the rising edge of the CLK input. A Read operation is initiated


    OCR Scan     		TC55VL818FF-75 288-WORD 18-BIT DD417Ã LQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55VD818FF-133,-143,-150 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VD818FF is a synchronous static random access memory SRAM organized as 524,288 words by 18


    OCR Scan     		TC55VD818FF-133 288-WORD 18-BIT TC55VD818FF LQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T C55V2161 FTI-85f-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		C55V2161 FTI-85f-10 072-WORD 16-BIT TC55V2161FTI 152-bit PDF