RHRU50120
Abstract: No abstract text available
Text: RHRU50120 April 1995 Title HR 012 bt A, 00V pert ode utho 3946.1 50A, 1200V Hyperfast Diode Features The RHRU50120 TA49100) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU50120
TA49100)
RHRU50120
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RHRU50120
Abstract: No abstract text available
Text: RHRU50120 April 1995 File Number 3946.1 50A, 1200V Hyperfast Diode Features The RHRU50120 TA49100 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU50120
TA49100)
RHRU50120
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RHRU50120
Abstract: No abstract text available
Text: RHRU50120 January 2002 50A, 1200V Hyperfast Diode Features The RHRU50120 TA49100 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU50120
TA49100)
175oC
RHRU50120
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RHRU50120
Abstract: No abstract text available
Text: RHRU50120 April 1995 File Number 3946.1 50A, 1200V Hyperfast Diode Features The RHRU50120 TA49100 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU50120
TA49100)
RHRU50120
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RHRU50120
Abstract: No abstract text available
Text: RHRU50120 S E M I C O N D U C T O R 50A, 1200V Hyperfast Diode April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns SINGLE LEAD JEDEC STYLE TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHRU50120
O-218
TA49100)
175oC
RHRU50120
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RHRG50120
Abstract: G5012 g50-12
Text: RHRG50120 Data Sheet January 2000 File Number 3947.3 50A, 1200V Hyperfast Diode Features The RHRG50120 is a hyperfast diode with soft recovery • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <85ns [ /Title characteristics trr < 85ns . It has half the recovery time of
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RHRG50120
RHRG50120
175oC
G5012
g50-12
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Hyperfast Diode 1200V
Abstract: RHRG50120
Text: RHRG50120 Data Sheet January 2000 File Number 3947.3 50A, 1200V Hyperfast Diode Features The RHRG50120 is a hyperfast diode with soft recovery characteristics trr < 85ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRG50120
RHRG50120
150oC
Hyperfast Diode 1200V
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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RHRG50120
Abstract: No abstract text available
Text: RHRG50120 S E M I C O N D U C T O R 50A, 1200V Hyperfast Diode April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHRG50120
O-247
TA49100)
175oC
RHRG50120
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RHRG50120
Abstract: No abstract text available
Text: RHRG50120 Data Sheet January 2002 50A, 1200V Hyperfast Diode Features The RHRG50120 is a hyperfast diode with soft recovery characteristics trr < 85ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRG50120
RHRG50120
175oC
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Untitled
Abstract: No abstract text available
Text: RHRU50120 Semiconductor April 1995 File Number 3946.1 50A, 1200V Hyperfast Diode Features The RHRU50120 TA49100 are hyperfast diodes with soft recovery characteristics (tp p < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passi
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RHRU50120
TA49100)
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Untitled
Abstract: No abstract text available
Text: RHRU50120 fS3 H A R R IS U m S E M I C O N D U C T O R 50A, 1200V Hyperfast Diode April 1995 Features Package • Hyperfast with Soft R ecovery.<85ns • Operating Tem p eratu re. +175°C
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RHRU50120
O-218
TA49100)
RHRU50120
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Untitled
Abstract: No abstract text available
Text: RHRG50120 f ü H A R R IS S E M I C O N D U C T O R 50A, 1200V Hyperfast Diode A p ril 1 9 9 5 Features Package • Hyperfast with Soft R ecovery.<85ns • Operating Tem p eratu
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RHRG50120
TA49100)
RHRG50120
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Hyperfast Diode 1200V
Abstract: freewheeling diode 50A 1200v diode to247 RHRG50120 TA49100 hyperfast diode switching circuits
Text: interrii RHRG50120 Data Sheet J a n u a ry . win File Num ber 3947.3 50A, 1200V Hyperfast Diode Features The RHRG50120 is a hyperfast diode with soft recovery characteristics trr < 85ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRG50120
RHRG50120
TA49100.
O-247
1-888-INTERSIL
00A/ns
Hyperfast Diode 1200V
freewheeling diode 50A
1200v diode to247
TA49100
hyperfast diode
switching circuits
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