600v 100a
Abstract: RHRU10060 RHRU10040 RHRU10050
Text: RHRU10040, RHRU10050, RHRU10060 S E M I C O N D U C T O R 100A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . < 50ns JEDEC STYLE TO-218 • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
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RHRU10040,
RHRU10050,
RHRU10060
O-218
175oC
RHRU10050
TA49069)
600v 100a
RHRU10060
RHRU10040
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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RHRU10060
Abstract: No abstract text available
Text: RHRU10060 Data Sheet Title HR 006 bt 0A, 0V pert ode utho eyrds 0A, 0V pert ode, er- January 2000 File Number 3572.3 100A, 600V Hyperfast Diode Features The RHRU10060 is a hyperfast diode with soft recovery characteristics trr < 50ns). It has half the recovery time of
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RHRU10060
RHRU10060
175oC
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600v 100a
Abstract: RHRU10060
Text: RHRU10060 Data Sheet January 2000 File Number 3572.3 100A, 600V Hyperfast Diode Features The RHRU10060 is a hyperfast diode with soft recovery characteristics trr < 50ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRU10060
RHRU10060
600v 100a
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RHRU10060
Abstract: No abstract text available
Text: RHRU10060 Data Sheet January 2002 100A, 600V Hyperfast Diode Features The RHRU10060 is a hyperfast diode with soft recovery characteristics trr < 50ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU10060
RHRU10060
175oC
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Untitled
Abstract: No abstract text available
Text: RHRU10040, RHRU10050, RHRU10060 Semiconductor April 1995 100A, 400V - 600V Hyperfast Diodes File Number 3572.2 Features RHRU10040, RHRU10050 and RHRU10060 TA49069 are hyperfast diodes with soft recovery characteristics (tpp < 50ns). They have half the recovery time of ultrafast diodes and are sili
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RHRU10040,
RHRU10050,
RHRU10060
RHRU10050
TA49069)
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PDF
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N11I
Abstract: TA49069 600V 25A Ultrafast Diode RHRU10060 RU10060
Text: RHRU10060 interrii m i J a n u a ry . Data Sheet File Num ber 3572.3 100A, 600V Hyperfast Diode Features The RHRU10060 is a hyperfast diode with soft recovery characteristics trr < 50ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRU10060
RHRU10060
TA49069.
O-218
RU10060
N11I
TA49069
600V 25A Ultrafast Diode
RU10060
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