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    Vishay Siliconix SIHL540STRL-GE3

    SIHL540STRL-GE3 N-channel MOSFET Transistor, 28 A, 100 V, 2+Tab-Pin TO-263 | Siliconix / Vishay SIHL540STRL-GE3
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    RS SIHL540STRL-GE3 Bulk 5
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    Vishay Intertechnologies SIHL540STRL-GE3

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    Bristol Electronics SIHL540STRL-GE3 785
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    Quest Components SIHL540STRL-GE3 628
    • 1 $3.264
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    • 1000 $1.3464
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    SIHL540 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL540S

    Abstract: SiHL540S SiHL540S-E3
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL540S, SiHL540S O-263) 2002/95/EC 11-Mar-11 IRL540S SiHL540S-E3

    IRL540

    Abstract: SiHL540 SiHL540-E3 IRL540PBF
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 O-220 O-220 18-Jul-08 IRL540 SiHL540-E3 IRL540PBF

    smd diode 841

    Abstract: No abstract text available
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL540S, SiHL540S SMD-220 18-Jul-08 smd diode 841

    Untitled

    Abstract: No abstract text available
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL540S, SiHL540S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRL540

    Abstract: irl54
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL540 irl54

    IRL540

    Abstract: SiHL540 SiHL540-E3
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 2002/95/EC O-220AB O-220A 11-Mar-11 IRL540 SiHL540-E3

    Untitled

    Abstract: No abstract text available
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRL540

    Abstract: No abstract text available
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 2002/95/EC O-220AB O-220AB 11-Mar-11 IRL540

    Untitled

    Abstract: No abstract text available
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL540S, SiHL540S 2002/95/EC O-263) 18-Jul-08

    smd diode 841

    Abstract: No abstract text available
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL540S, SiHL540S SMD-220 12-Mar-07 smd diode 841

    Untitled

    Abstract: No abstract text available
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL540S, SiHL540S 2002/95/EC O-263) 11-Mar-11

    IRL540S

    Abstract: SiHL540S SiHL540S-E3
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL540S, SiHL540S O-263) 18-Jul-08 IRL540S SiHL540S-E3

    Untitled

    Abstract: No abstract text available
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL540S, SiHL540S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRL540S_RC, SiHL540S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL540S SiHL540S AN609, 8314m 0659m 4384m 5026m 2686m

    irl540

    Abstract: No abstract text available
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irl540

    IRL540

    Abstract: No abstract text available
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL540

    IRL540

    Abstract: st 8550d SiHL540 SiHL540-E3
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 O-220 O-220 18-Jul-08 IRL540 st 8550d SiHL540-E3

    Untitled

    Abstract: No abstract text available
    Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL540S, SiHL540S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 O-220 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive


    Original     		PDF IRL540, SiHL540 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12