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    Vishay Siliconix SIA950DJ-T1-GE3

    MOSFET 2N-CH 190V 0.95A SC70-6
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    SIA950DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA950DJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 190V 950MA SC-70-6 Original PDF

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    SiA950DJ

    Abstract: SIA950DJ-T1-GE3 SC-70-6
    Text: New Product SiA950DJ Vishay Siliconix Dual N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 3.8 at VGS = 4.5 V 0.95 190 4.2 at VGS = 2.5 V 0.9 17 at VGS = 1.8 V 0.3 • Halogen-free According to IEC 61249-2-21 • LITTLE FOOT Power MOSFET


    Original     		PDF SiA950DJ SC-70 SC-70-6 18-Jul-08 SIA950DJ-T1-GE3

    AN609

    Abstract: 03-FEB-09
    Text: SiA950DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiA950DJ AN609, 03-Feb-09 AN609 03-FEB-09

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477