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    SI7317DN Price and Stock

    Vishay Siliconix SI7317DN-T1-GE3

    MOSFET P-CH 150V 2.8A PPAK1212-8
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    DigiKey SI7317DN-T1-GE3 Reel 18,000 3,000
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    SI7317DN-T1-GE3 Cut Tape 3,354 1
    • 1 $1.12
    • 10 $0.92
    • 100 $0.7158
    • 1000 $0.49427
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    SI7317DN-T1-GE3 Digi-Reel 1
    • 1 $1.12
    • 10 $0.92
    • 100 $0.7158
    • 1000 $0.49427
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    New Advantage Corporation SI7317DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SI7317DN-T1-GE3

    Trans MOSFET P-CH 150V 2.8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7317DN-T1-GE3)
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    Avnet Americas SI7317DN-T1-GE3 Reel 63,000 3,000
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    SI7317DN-T1-GE3 Reel 3,000 3,000
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    Verical SI7317DN-T1-GE3 3,000 3,000
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    SI7317DN-T1-GE3 2,470 14
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    Arrow Electronics SI7317DN-T1-GE3 2,470 13 Weeks 1
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    Newark SI7317DN-T1-GE3 Reel 6,000
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    SI7317DN-T1-GE3 Reel 3,000
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    TTI SI7317DN-T1-GE3 Reel 6,000 3,000
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    TME SI7317DN-T1-GE3 1
    • 1 $1.003
    • 10 $0.843
    • 100 $0.702
    • 1000 $0.598
    • 10000 $0.598
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    Chip1Stop SI7317DN-T1-GE3 2,470
    • 1 $0.862
    • 10 $0.862
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    EBV Elektronik SI7317DN-T1-GE3 14 Weeks 3,000
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    SI7317DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7317DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 2.8A 1212-8 Original PDF

    SI7317DN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si7317DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 150 ID (A) 1.2 at VGS = - 10 V - 2.8 1.3 at VGS = - 6 V - 2.7 f Qg (Typ.) 6.5 nC PowerPAK 1212-8 • TrenchFET Power MOSFETs • PowerPAK® Package


    Original     		PDF Si7317DN Si7317DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7317DN www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si7317DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7317DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 150 ID (A) 1.2 at VGS = - 10 V - 2.8 1.3 at VGS = - 6 V - 2.7 f Qg (Typ.) 6.5 nC PowerPAK 1212-8 • TrenchFET Power MOSFETs • PowerPAK® Package


    Original     		PDF Si7317DN Si7317DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12