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    SI4932DY Search Results

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    SI4932DY Price and Stock

    Vishay Siliconix SI4932DY-T1-GE3

    MOSFET 2N-CH 30V 8A 8SOIC
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    DigiKey SI4932DY-T1-GE3 Digi-Reel 1,218 1
    • 1 $1.57
    • 10 $1.059
    • 100 $1.57
    • 1000 $0.55908
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    SI4932DY-T1-GE3 Cut Tape 1,218 1
    • 1 $1.57
    • 10 $1.059
    • 100 $1.57
    • 1000 $0.55908
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    SI4932DY-T1-GE3 Reel 2,500
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    • 10000 $0.50625
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    Vishay Intertechnologies SI4932DY-T1-GE3

    Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4932DY-T1-GE3)
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    Avnet Americas SI4932DY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4932DY-T1-GE3 12,500
    • 1 $1.57
    • 10 $1.06
    • 100 $0.746
    • 1000 $0.632
    • 10000 $0.517
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    TTI SI4932DY-T1-GE3 Reel 2,500
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    Avnet Asia SI4932DY-T1-GE3 19 Weeks 2,500
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    EBV Elektronik SI4932DY-T1-GE3 18 Weeks 2,500
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    International Rectifier SI4932DY-T1-GE3

    POWER MOSFET TRANSISTOR
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    Richardson RFPD SI4932DY-T1-GE3 1
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    SI4932DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4932DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8-SOIC Original PDF

    SI4932DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si4932

    Abstract: Si4932DY
    Text: SPICE Device Model Si4932DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4932DY 18-Jul-08 si4932

    si4932

    Abstract: m 9836 AN609
    Text: Si4932DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4932DY AN609, 31-Oct-08 si4932 m 9836 AN609

    si4932

    Abstract: SI4932DY-T1-GE3 Si4932DY
    Text: Si4932DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.015 at VGS = 10 V 8 0.017 at VGS = 4.5 V 8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4932DY Si4932DY-T1-GE3 18-Jul-08 si4932

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477