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Silicon Laboratories Inc SI4463-C2A-GMR IC RF TXRX ISM<1GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4463-C2A-GMR	Cut Tape	113,229		1	1 $9.06 10 $6.986 100 $5.6234 1000 $4.75459 10000 $4.75459	Buy Now
	SI4463-C2A-GMR	Digi-Reel	113,229		1	1 $9.06 10 $6.986 100 $5.6234 1000 $4.75459 10000 $4.75459	Buy Now
	SI4463-C2A-GMR	Reel	112,500		2,500	1 - 10 - 100 - 1000 - 10000 $4.0625	Buy Now
Mouser Electronics	SI4463-C2A-GMR		25,821			1 $5.16 10 $4.83 100 $4.16 1000 $4.07 10000 $4.06	Buy Now
Newark	SI4463-C2A-GMR	Cut Tape	240		1	1 $5.42 10 $5.05 100 $4.33 1000 $4.23 10000 $4.23	Buy Now
Bristol Electronics	SI4463-C2A-GMR		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4463-C2A-GMR		2,000			1 $9.54 10 $9.54 100 $9.54 1000 $4.77 10000 $4.77	Buy Now
	SI4463-C2A-GMR		311			1 $10.308 10 $10.308 100 $6.3566 1000 $5.6694 10000 $5.6694	Buy Now

Symmetry Electronics	SI4463-C2A-GMR				1	1 $4.06 10 $3.9 100 $3.9 1000 $3.9 10000 $3.9	Buy Now
Win Source Electronics	SI4463-C2A-GMR		20,100			1 - 10 - 100 $1.2125 1000 $1.0035 10000 $1.0035	Buy Now
Silicon Laboratories Inc SI4461-C2A-GMR IC RF TXRX ISM<1GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4461-C2A-GMR	Reel	52,500		2,500	1 - 10 - 100 - 1000 - 10000 $3.6875	Buy Now
Mouser Electronics	SI4461-C2A-GMR		51,106			1 $4.47 10 $4.25 100 $3.77 1000 $3.69 10000 $3.64	Buy Now
Newark	SI4461-C2A-GMR	Cut Tape	5,824		1	1 $4.89 10 $4.59 100 $3.93 1000 $3.84 10000 $3.84	Buy Now
Symmetry Electronics	SI4461-C2A-GMR				1	1 $3.94 10 $3.94 100 $3.94 1000 $3.94 10000 $3.94	Buy Now
Win Source Electronics	SI4461-C2A-GMR		17,950			1 - 10 $7.243 100 $4.829 1000 $4.829 10000 $4.829	Buy Now
Silicon Laboratories Inc SI4463-B1B-FMR IC RF TXRX ISM<1GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4463-B1B-FMR	Digi-Reel	46,370		1	1 $9.06 10 $6.986 100 $5.6234 1000 $4.75459 10000 $4.75459	Buy Now
	SI4463-B1B-FMR	Cut Tape	46,370		1	1 $9.06 10 $6.986 100 $5.6234 1000 $4.75459 10000 $4.75459	Buy Now
	SI4463-B1B-FMR	Reel	42,500		2,500	1 - 10 - 100 - 1000 - 10000 $4.0625	Buy Now
Mouser Electronics	SI4463-B1B-FMR		32,812			1 $4.93 10 $4.69 100 $4.15 1000 $4.07 10000 $4.02	Buy Now
Ameya Holding Limited	SI4463-B1B-FMR		3,464			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SI4463-B1B-FMR		52,950			1 - 10 - 100 $1.8386 1000 $1.5759 10000 $1.5759	Buy Now
Silicon Laboratories Inc SI4467-A2A-IMR IC RF TXRX ISM<1GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4467-A2A-IMR	Reel	27,500		2,500	1 - 10 - 100 - 1000 - 10000 $3.31712	Buy Now
Mouser Electronics	SI4467-A2A-IMR		9,224			1 $6.46 10 $5.84 100 $4.83 1000 $3.66 10000 $3.53	Buy Now
Symmetry Electronics	SI4467-A2A-IMR				1	1 $3.59 10 $3.59 100 $3.59 1000 $3.59 10000 $3.59	Buy Now
Vishay Siliconix SI4463BDY-T1-GE3 MOSFET P-CH 20V 9.8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4463BDY-T1-GE3	Cut Tape	4,957		1	1 $2.32 10 $1.491 100 $2.32 1000 $0.74633 10000 $0.74633	Buy Now
	SI4463BDY-T1-GE3	Digi-Reel	4,957		1	1 $2.32 10 $1.491 100 $2.32 1000 $0.74633 10000 $0.74633	Buy Now

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SI446 Datasheets (69)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4460-B0B-FM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN	Original	PDF
SI4460-B1B-FM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN	Original	PDF
SI4460-B1B-FMR	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN	Original	PDF
SI4460-C2A-GM	Silicon Labs	RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN	Original	PDF
SI4460-C2A-GMR	Silicon Labs	RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN	Original	PDF
SI4461-868-DK	Silicon Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, KIT DEV WIRELESS SI4461 868MHZ	Original	PDF
SI4461-B0B-FM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN	Original	PDF
SI4461-B1B-FM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN	Original	PDF
SI4461-B1B-FMR	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN	Original	PDF
SI4461-C2A-GM	Silicon Labs	RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN	Original	PDF
SI4461-C2A-GMR	Silicon Labs	RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN	Original	PDF
SI4462DY	Vishay Siliconix	MOSFETs	Original	PDF
Si4462DY SPICE Device Model	Vishay	N-Channel 200-V (D-S) MOSFET	Original	PDF
SI4462DY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.15A 8-SOIC	Original	PDF

SI4462DY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.15A 8-SOIC	Original	PDF
SI4463-915-DK	Silicon Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, KIT DEV WIRELESS SI4463 915MHZ	Original	PDF
SI4463-B0B-FM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN	Original	PDF
SI4463-B1B-FM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN	Original	PDF
SI4463-B1B-FMR	Silicon Laboratories	RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN	Original	PDF
SI4463BDY	Vishay Siliconix	MOSFETs	Original	PDF

SI446 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: AN658 S i 4 4 6 X AND A R I B S TD - T 6 7 C O M P L I A N C E AT 4 2 6 – 4 2 9 M H Z 1. Introduction This application note demonstrates the compliance of Si446x-B0 RFICs with the regulatory requirements of ARIB STD-T67 V1.1, dated November 30th 2005 in the 426/429 MHz band. Although other members of the Si446x	Original	AN658 Si446x-B0 STD-T67 Si446x Si4461-B0 4461-TSC13D434 0x2201	PDF
NS4160 Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .	Original	Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET	PDF
4463 SO8 MOSFET Abstract: 4463 B Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .	Original	Si4463DY 4463 SO8 MOSFET 4463 B	PDF
Untitled Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4463DY S-51654--Rev. 21-Apr-97	PDF
74681 Abstract: 7815 7815 DATASHEET M 1357 AN609 Si4465ADY Text: Si4465ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4465ADY AN609 08-May-07 74681 7815 7815 DATASHEET M 1357	PDF
Si4465ADY Abstract: 73856 Text: Si4465ADY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ) 55 nC FEATURES • TrenchFET Power MOSFET	Original	Si4465ADY Si4465ADY-T1-E3 08-Apr-05 73856	PDF
Untitled Abstract: No abstract text available Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21	Original	Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si4462DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • TrenchFET Power MOSFET • PWM Optimized for fast Switching Pb-free Available	Original	Si4462DY Si4462DY-T1 Si4462DY-T1-E3 18-Jul-08	PDF
95-4066 Abstract: 3335 9828 AN609 Si4463BDY 69005 Text: Si4463BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4463BDY AN609 19-Mar-07 95-4066 3335 9828 69005	PDF
Si4461DY Abstract: 75576 0723 AN609 si4461 Text: Si4461DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si4461DY AN609, 30-Jul-08 75576 0723 AN609 si4461	PDF
Si4464DY Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051 Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg	Original	Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 18-Jul-08 720-51 72051	PDF
AN609 Abstract: Si4462DY 784403 Text: Si4462DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4462DY AN609 19-Mar-07 784403	PDF
74222 Abstract: Si4451DY Si4451DY-T1-E3 Si4451DY-T1 Si4467DY Si4467DY-T1 Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4467DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4467DY-T1-E3 Si4451DY-T1 Replaces Si4467DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4451DY Si4467DY Si4451DY-T1-E3 Si4467DY-T1-E3 Si4451DY-T1 Si4467DY-T1 31-Oct-06 74222	PDF
Si4463DY Abstract: 70707 Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4463DY 18-Jul-08 70707	PDF

SI4464 Abstract: Si4464DY Text: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4464DY S-51095Rev. 13-Jun-05 SI4464	PDF
Si4463BDY Abstract: Si4463BDY-T1-E3 Text: New Product Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 13.7 0.014 at VGS = - 4.5 V - 12.3 0.020 at VGS = - 2.5 V - 10.3 RoHS COMPLIANT S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D	Original	Si4463BDY Si4463BDY-T1-E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4462DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for fast Switching	Original	Si4462DY 2002/95/EC Si4462DY-T1-E3 Si4462DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4464DY Abstract: No abstract text available Text: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4464DY 0-to-10V 28-Feb-03	PDF
7216 Abstract: Si4462DY Text: SPICE Device Model Si4462DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4462DY 0-to-10V 24-Feb-03 7216	PDF
Si4465DY Abstract: Si4465DY SPICE Device Model Text: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4465DY 07-May-01 Si4465DY SPICE Device Model	PDF
Si4466DY Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4466DY S-54695--Rev. 15-Sep-97	PDF
Untitled Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G	Original	Si4463DY Si4463DY-T1 Si4463DY-T1--E3 S-50694--Rev. 18-Apr-05	PDF
PF7000 Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4463DY 08-Apr-05 PF7000	PDF
SI4463BDY Abstract: No abstract text available Text: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View	Original	Si4463BDY Si4463BDY--E3 Si4463BDY-T1--E3 08-Apr-05	PDF

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SI446 Price and Stock

Silicon Laboratories Inc SI4463-C2A-GMR

Silicon Laboratories Inc SI4461-C2A-GMR

Silicon Laboratories Inc SI4463-B1B-FMR

Silicon Laboratories Inc SI4467-A2A-IMR

Vishay Siliconix SI4463BDY-T1-GE3

SI446 Datasheets (69)

SI446 Datasheets Context Search

Untitled

NS4160

4463 SO8 MOSFET

Untitled

74681

Si4465ADY

Untitled

Untitled

95-4066

Si4461DY

Si4464DY

AN609

74222

Si4463DY

SI4464

Si4463BDY

Untitled

Si4464DY

7216

Si4465DY

Si4466DY

Untitled

PF7000

SI4463BDY