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    SI441 Price and Stock

    Rochester Electronics LLC SI4410DY

    MOSFET N-CH 30V 10A 8SOIC
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    DigiKey SI4410DY Bulk 2,984 523
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    Vishay Siliconix SI4413ADY-T1-E3

    MOSFET P-CH 30V 10.5A 8SO
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    DigiKey SI4413ADY-T1-E3 Cut Tape 1,475 1
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    SI4413ADY-T1-E3 Digi-Reel 1,475 1
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    onsemi SI4410DY

    MOSFET N-CH 30V 10A 8SOIC
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    DigiKey SI4410DY Cut Tape 1
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    SI4410DY Reel 2,500
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    Avnet Americas SI4410DY Bulk 4 Weeks 629
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    Infineon Technologies AG SI4410DY

    MOSFET N-CH 30V 10A 8SO
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    DigiKey SI4410DY Tube 95
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    Infineon Technologies AG SI4410DYPBF

    MOSFET N-CH 30V 10A 8SO
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    RS SI4410DYPBF Bulk 3,800
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    Win Source Electronics SI4410DYPBF 10,873
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    Find more SI441 price and stock on Findchips.com

    SI441 Datasheets (72)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4410BDYE3 Vishay IC, TR MOSFET-N 10A 30V SMT, SO-8 Original PDF
    SI4410BDY-E3 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4410BDY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4410BDY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4410BDY-T1-E3 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4410BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.5A 8-SOIC Original PDF
    SI4410BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.5A 8-SOIC Original PDF
    Si4410DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4410DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4410DY International Rectifier HEXFET Power Mosfet Original PDF
    SI4410DY Kexin N-Channel Enhancement Mode MOSFET Original PDF
    SI4410DY NXP Semiconductors SI4410DY - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 10 A; Qgd (typ): 7 nC; RDS(on): 13.5@10V20@4.5V mOhm; VDSmax: 30 V Original PDF
    SI4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    Si4410DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    Si4410DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4410DY Vishay Telefunken N-channel 30-v (d-s) Mosfet Original PDF
    SI4410DY International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF
    SI4410DY,118 NXP Semiconductors SI4410DY - N-channel TrenchMOS logic level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    SI4410DY,518 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 10 A; Qgd (typ): 7 nC; RDS(on): 13.5@10V20@4.5V mOhm; VDSmax: 30 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" Original PDF

    SI441 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507

    Si4410BDY

    Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11

    MS-012AA

    Abstract: Si4410DY
    Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced


    Original     		PDF 91853C Si4410DY 800mW MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY

    Untitled

    Abstract: No abstract text available
    Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4416DY S-56945--Rev. 23-Nov-98

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S44176Rev.

    D0807

    Abstract: Si4410DY
    Text: Si4410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4410DY S45252Rev. D0807

    SI4412DY

    Abstract: No abstract text available
    Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY

    Untitled

    Abstract: No abstract text available
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch


    Original     		PDF Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 18-Jul-08

    Si4413DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4413DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4413DY 18-Jul-08

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 18-Jul-08

    Si4418DY

    Abstract: Si4418DY-T1-E3 Si4418DY-T1-GE3
    Text: Si4418DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.130 at VGS = 10 V 3 0.142 at VGS = 6.0 V 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4418DY Si4418DY-T1-E3 Si4418DY-T1-GE3 20lectual 18-Jul-08

    c 6092

    Abstract: Si4413CDY transistor 0882 AN609
    Text: Si4413CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4413CDY AN609, 05-Jun-08 c 6092 transistor 0882 AN609

    74182

    Abstract: 74182 data sheet 74182 datasheet S-60675 Si4413ADY
    Text: SPICE Device Model Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4413ADY 18-Jul-08 74182 74182 data sheet 74182 datasheet S-60675

    Si4410DY

    Abstract: Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8


    Original     		PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced


    Original     		PDF 91853C Si4410DY 800mW

    Untitled

    Abstract: No abstract text available
    Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced


    Original     		PDF Si4410DYPbF 800mW EIA-481 EIA-541.

    irf 739 mosfet

    Abstract: mosfet irf 380 EIA-541 Si4410DYPbF ic power so 8 single mosfet
    Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced


    Original     		PDF Si4410DYPbF 800mW EIA-481 EIA-541. irf 739 mosfet mosfet irf 380 EIA-541 ic power so 8 single mosfet

    74307

    Abstract: mosfet 4468 4484 AN609 Si4413ADY 112562
    Text: Si4413ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4413ADY AN609 07-May-07 74307 mosfet 4468 4484 112562

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si4411DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.010 at VGS = - 10 V - 13 0.0155 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4411DY 2002/95/EC Si4411DY-T1-E3 Si4411DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET APPLICATIONS


    Original     		PDF Si4413ADY Si4413ADY-T1-E3 Si4413ADY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4416DY VISHAY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) (q 1 lD (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 30 9° ' D D D D SO-8 6 s N-Channel MOSFET A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )


    OCR Scan     		PDF Si4416DY S2SM735 DD17flflT

    LD93

    Abstract: FDR4410 SOIC-16
    Text: A p ril 1 9 9 8 FAIRCHILD M IC Q N D U C T D R tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si441 ODY. • 9.3 A, 30 V. R d : 0.013 Q. @ VG : 10 V


    OCR Scan     		PDF FDR4410 FDR4410 Si441 OT-23 OT-223 SOIC-16 FDR441 LD93 SOIC-16