72501
Abstract: Si3971DV Si3971DV-T1
Text: Si3971DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.140 @ VGS = −4.5 V −2.2 0.200 @ VGS = −2.5 V −1.8 0.300 @ VGS = −1.8 V −0.7 D TrenchFETr Power MOSFET APPLICATIONS
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Si3971DV
Si3971DV-T1--E3
S-40575--Rev.
29-Mar-04
72501
Si3971DV-T1
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4446
Abstract: AN609 Si3971DV
Text: Si3971DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3971DV
AN609
29-Aug-05
4446
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Untitled
Abstract: No abstract text available
Text: Si3971DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.140 @ VGS = −4.5 V −2.2 0.200 @ VGS = −2.5 V −1.8 0.300 @ VGS = −1.8 V −0.7 D TrenchFETr Power MOSFET APPLICATIONS
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Si3971DV
Si3971DV-T1--E3
S-32412--Rev.
24-Nov-03
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72501
Abstract: No abstract text available
Text: Si3971DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.140 @ VGS = −4.5 V −2.2 0.200 @ VGS = −2.5 V −1.8 0.300 @ VGS = −1.8 V −0.7 D TrenchFETr Power MOSFETS APPLICATIONS
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Si3971DV
Si3971DV-T1
S-32271--Rev.
03-SNov-03
72501
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Si3971DV
Abstract: Si3971DV-T1 72501
Text: Si3971DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.140 @ VGS = −4.5 V −2.2 0.200 @ VGS = −2.5 V −1.8 0.300 @ VGS = −1.8 V −0.7 D TrenchFETr Power MOSFET APPLICATIONS
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Si3971DV
Si3971DV-T1--E3
18-Jul-08
Si3971DV-T1
72501
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Untitled
Abstract: No abstract text available
Text: Si3971DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.140 @ VGS = −4.5 V −2.2 0.200 @ VGS = −2.5 V −1.8 0.300 @ VGS = −1.8 V −0.7 D TrenchFETr Power MOSFET APPLICATIONS
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Si3971DV
Si3971DV-T1--E3
08-Apr-05
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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