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    Vishay Intertechnologies SI3435DV-T1-E3

    MOSFETs 12V 4.8A 2W
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    Mouser Electronics SI3435DV-T1-E3
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    Vishay Intertechnologies SI3435DV-T1-GE3

    MOSFETs 12V 6.3A 2.0W 36mohm @ 4.5V
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    Mouser Electronics SI3435DV-T1-GE3
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    Vishay Intertechnologies SI3435DV-T1

    4800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI3435DV-T1 2,970
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    Vishay Intertechnologies SI3435DV

    4800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI3435DV 200
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    SI3435DV Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si3435DV Vishay Intertechnology P-Channel 12-V (D-S) MOSFET Original PDF
    SI3435DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    Si3435DV SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    SI3435DV-T1 Vishay Intertechnology P-Channel 12-V (D-S) MOSFET Original PDF

    SI3435DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si3435DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.036 @ VGS = - 4.5 V - 6.3 0.050 @ VGS = - 2.5 V - 5.3 0.073 @ VGS = - 1.8 V - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		PDF Si3435DV 18-Jul-08

    Si3435DV

    Abstract: 63A18 71522
    Text: SPICE Device Model Si3435DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3435DV 13-Apr-01 63A18 71522

    AN609

    Abstract: Si3435DV
    Text: Si3435DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3435DV AN609 19-Jan-06

    Si3435DV

    Abstract: 63A18
    Text: SPICE Device Model Si3435DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3435DV 18-Jul-08 63A18

    Si3435DV

    Abstract: No abstract text available
    Text: Si3435DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.036 @ VGS = - 4.5 V - 6.3 0.050 @ VGS = - 2.5 V - 5.3 0.073 @ VGS = - 1.8 V - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		PDF Si3435DV S-03371--Rev. 03-Mar-03

    Si3435DV

    Abstract: No abstract text available
    Text: Si3435DV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6.3 - 12 0.050 at VGS = - 2.5 V - 5.3 0.073 at VGS = - 1.8 V - 4.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3435DV 2002/95/EC Si3435DV-T1-E3 Si3435DV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3435DV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6.3 - 12 0.050 at VGS = - 2.5 V - 5.3 0.073 at VGS = - 1.8 V - 4.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3435DV 2002/95/EC Si3435DV-T1-E3 Si3435DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3435DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3435DV P-Channel 12-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si3435DV

    Untitled

    Abstract: No abstract text available
    Text: Si3435DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.036 @ VGS = - 4.5 V - 6.3 0.050 @ VGS = - 2.5 V - 5.3 0.073 @ VGS = - 1.8 V - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		PDF Si3435DV 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3435DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.036 @ VGS = –4.5 V –6.3 0.050 @ VGS = –2.5 V –5.3 0.073 @ VGS = –1.8 V –4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		PDF Si3435DV S-02122--Rev. 02-Oct-00

    Si3435DV

    Abstract: 63A18
    Text: SPICE Device Model Si3435DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3435DV S-51862Rev. 12-Sep-05 63A18

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8