Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STRH100N6FSY1 Search Results

    STRH100N6FSY1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1128 marking

    Abstract: JESD97
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original
    PDF STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm 1128 marking JESD97

    TC 2608

    Abstract: JESD97 STRH100N6FSY1
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original
    PDF STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm TC 2608 JESD97 STRH100N6FSY1

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original
    PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original
    PDF STRH100N6FSY3 O-254AA 100kRad 34Mev/cm

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original
    PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original
    PDF STRH100N6 O-254AA STRH100N6HY1

    am-008

    Abstract: MIL-STD-750E STRH100N6H
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original
    PDF STRH100N6 O-254AA STRH100N6HY1 STRH100N6HYG DocID18353 am-008 MIL-STD-750E STRH100N6H

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.012Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N6FSY3 60V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original
    PDF STRH100N6FSY3 O-254AA STRH100N6

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original
    PDF STRH100N6FSY3 O-254AA 100kRad 34Mev/cm

    STRH100N6H

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original
    PDF STRH100N6 O-254AA STRH100N6HY1 STRH100N6HYG STRH100N6H

    MIL-STD-750E

    Abstract: malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3
    Text: STRH100N6 N-channel 60 V, 0.012 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened


    Original
    PDF STRH100N6 O-254AA STRH100N6FSY1y MIL-STD-750E malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original
    PDF STRH100N6 O-254AA STRH100N6HY1