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    STP36N05LFI Search Results

    STP36N05LFI Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP36N05LFI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP36N05LFI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP36N05LFI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STP36N05LFI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UA36A

    Abstract: C3621 STP36N05L STP36N05LFI
    Text: STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N05L STP36N05LFI 100oC O-220 UA36A C3621 STP36N05L STP36N05LFI PDF

    STP36N05L

    Abstract: STP36N05LFI STP36N06L STP36N06LFI UA36A airbag
    Text: STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N06L STP36N06LFI STP36N05L STP36N05LFI 100oC O-220 STP36N05L STP36N05LFI STP36N06L STP36N06LFI UA36A airbag PDF

    STP36N05L

    Abstract: STP36N05LFI
    Text: STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N05L STP36N05LFI 100oC O-220 STP36N05L STP36N05LFI PDF

    14A144

    Abstract: STP36N05L STP36N05LFI
    Text: STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N05L STP36N05LFI 100oC 175oC O-220 14A144 STP36N05L STP36N05LFI PDF

    C2514

    Abstract: STP36N05L STP36N05LFI STP36N06L STP36N06LFI
    Text: STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N06L STP36N06LFI STP36N05L STP36N05LFI 100oC 175oC O-220 C2514 STP36N05L STP36N05LFI STP36N06L STP36N06LFI PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iL iO M K I stp36Nosl STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		36Nosl STP36N05LFI STP36N05L STP36N 05LFI PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP36N 05L S TP36N05LFI STP36N05L STP36N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP36N TP36N05LFI STP36N05L STP36N05LFI STP36N05L/FI ISQWATT220 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF