chip yx 801
Abstract: yx 801 yx 801 ic yx 801 4 pin IC yx 801
Text: PF829-03 SRM20V512SLMX7 512K-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns ● 65,536 wordsx8 bit Asynchronous • DESCRIPTION The SRM20V512SLMX7 is a 65,536 words×8-bit asynchronous, static, random access memory on a monolithic
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PF829-03
SRM20V512SLMX7
512K-Bit
SRM20V512SLMX7
chip yx 801
yx 801
yx 801 ic
yx 801 4 pin
IC yx 801
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SRM20V512SLKT7
Abstract: SRM20V512SLMT7 SRM20V512SLRT7 SRM20V512SLTT7 SRM20V512SLYT7
Text: PF861-02 SRM20V512SLMT7 512K-Bit Static RAM ge lta o n V w tio Lo pera cts O odu Pr ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns ● 65,536 wordsx8 bit Asynchronous • DESCRIPTION The SRM20V512SLMT7 is a 65,536 words×8-bit asynchronous, static, random access memory on a monolithic
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PF861-02
SRM20V512SLMT7
512K-Bit
SRM20V512SLMT7
SRM20V512SLKT7
SRM20V512SLRT7
SRM20V512SLTT7
SRM20V512SLYT7
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SRM20V512SLMT7
Abstract: SRM20V512SLTT7
Text: PF861-02 SRM20V512SLMT7 512K-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns ● 65,536 wordsx8 bit Asynchronous • DESCRIPTION The SRM20V512SLMT7 is a 65,536 words×8-bit asynchronous, static, random access memory on a monolithic
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PDF
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PF861-02
SRM20V512SLMT7
512K-Bit
SRM20V512SLMT7
SRM20V512SLTT7
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SRM20V512SLKX7
Abstract: SRM20V512SLMX7 SRM20V512SLRX7 SRM20V512SLTX7 SRM20V512SLYX7
Text: PF829-03 SRM20V512SLMX7 512K-Bit Static RAM ge lta Vo ion w t Lo pera cts O odu Pr ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns ● 65,536 wordsx8 bit Asynchronous • DESCRIPTION The SRM20V512SLMX7 is a 65,536 words×8-bit asynchronous, static, random access memory on a monolithic
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PDF
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PF829-03
SRM20V512SLMX7
512K-Bit
SRM20V512SLMX7
SRM20V512SLKX7
SRM20V512SLRX7
SRM20V512SLTX7
SRM20V512SLYX7
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Untitled
Abstract: No abstract text available
Text: EPSON PF861-02 SRM20V512SLM Ï7 5 1 2 K -B it S ta tic R A M • • • • Wide Temperature Range Low Supply Current Access Time 70ns 65,536 wordsx8 bit Asynchronous I DESCRIPTION The SRM20V512SLMT7 is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic
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PF861-02
SRM20V512SLM
SRM20V512SLMT7
SRM20V512SLMT
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Untitled
Abstract: No abstract text available
Text: EPSON PF861-02 SRM20V512SLM Ï7 5 1 2 K -B it S ta tic R A M • • • • Wide Temperature Range Low Supply Current Access Time 70ns 65,536 wordsx8 bit Asynchronous I DESCRIPTION The SRM20V512SLMT7 is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic
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PF861-02
SRM20V512SLM
SRM20V512SLMT7
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0Q0127
Abstract: 0Q012
Text: EPSON PF829-02 SRM20V512 SLMX7 512K-Bit Static RAM & • • • • Wide Temperature Range Low Supply Current Access Time 70ns 65,536 wordsx8 bit Asynchronous I DESCRIPTION The SRM20V512SLMX7 is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic
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PF829-02
SRM20V512
512K-Bit
SRM20V512SLMX7
33b4134
0Q0127
0Q012
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Untitled
Abstract: No abstract text available
Text: EPSON P F 829-03 SRM20V512 SLMX7 512K-Bit Static RAM rirJ^ • • • • Wide Temperature Range Low Supply Current Access Time 70ns 65,536 wordsx8 bit Asynchronous I DESCRIPTION The SRM20V512SLMX7 is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic
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SRM20V512
512K-Bit
SRM20V512SLMX7
SRM20V512SLMX
SRM20V512SLMX7
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Untitled
Abstract: No abstract text available
Text: EPSON PF861-01 SRM20V512SLM Ï7 5 1 2 K -B it S ta tic ri§ ^ • • • • R A M Wide Temperature Range Low Supply Current Access Time 70ns 65,536 wordsx8 bit Asynchronous I DESCRIPTION The SRM20V512SLMT7 is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic
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PF861-01
SRM20V512SLM
SRM20V512SLMT7
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PF829-03
Abstract: SRM20V512SLKX7 SRM20V512SLMX7 SRM20V512SLRX7 SRM20V512SLTX7 SRM20V512SLYX7
Text: EPSON P F 829-03 SRM 20V51 2 SLM X 7 512K-Bit Static RAM • • • • W ide Tem perature Range Low Supply Current Access Tim e 70ns 65,536 w ordsx8 bit Asynchronous I DESCRIPTION T he S R M 20V512SLM X 7 is a 65,536 w ordsx8 -bit asynchronous, static, random access m em ory on a m onolithic
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PF829-03
SRM20V512SLMX7
512K-Bit
SRM20V512SLMX7
PF829-03
SRM20V512SLKX7
SRM20V512SLRX7
SRM20V512SLTX7
SRM20V512SLYX7
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a13c
Abstract: SRM20V512SLKT7 SRM20V512SLMT7 SRM20V512SLRT7 SRM20V512SLTT7 SRM20V512SLYT7
Text: EPSON P F 861-02 SRM 20V51 2 SLM T 7 5 1 2 K -B it S ta tic • • • • R A M W ide Tem perature Range Low Supply Current Access Tim e 70ns 65,536 w ordsx8 bit Asynchronous I DESCRIPTION T he SR M 20V512SLM T7 is a 65,536 w ordsx8 -bit asynchronous, static, random access m em ory on a m onolithic
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PF861-02
SRM20V512SLMT7
512K-Bit
SRM20V512SLMT7
a13c
SRM20V512SLKT7
SRM20V512SLRT7
SRM20V512SLTT7
SRM20V512SLYT7
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SRM2A256SLC
Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Text: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0
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SRM2264LC
SRM2264LCT
SRM2464MT*
SRM2564C
SRM2A256SLC
SRM2A256LLMX
SRM2A256LLCT
SRM2B256SLMX
32KX8
SRM2B256SLMT
SRM2A256SLC
SRM20100LLM
srm2264lct
SRM2A256LLCT
SRM20100LL
SRM2564C
SRM20100LMT
tl512
SRM20116
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DIP28pin
Abstract: sop6
Text: Memories S tatic H A M s CMOS Static RAMs Wide temperature operation: —25 to +85°C P a rt n u m b e r C a p a c ity O ^ a r t a t o n Power s u p p ly (V ) C urre n t consum ption Operating S tandby (mA, Max.) i ^ A , Max.) Am bient te n $ d ra lu re
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SRM2A256LLMX70
SRM2A256LLMX85
SRM2A256LLMX10
SRM2A1256LLMT
DIP-28pin,
OP2-28pin,
-28pin
-28pin-R1
-28pin,
DIP28pin
sop6
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