SPD08N05L Search Results

SPD08N05L Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPD08N05L		Infineon Technologies	SIPMOS Power-Transistor		Original	PDF
SPD08N05L		Siemens			Original	PDF
SPD08N05L		Siemens			Original	PDF
SPD08N05L		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

SPD08N05L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SPD08N05L Abstract: SPU08N05L P-TO252 Text: SPD08N05L SPU08N05L Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD08N05L 55 V 8.4 A 0.18 Ω P-TO252 Q67000-. . . . - . .	Original	SPD08N05L SPU08N05L P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD08N05L SPU08N05L P-TO252	PDF
08n05 Abstract: 08N05L Q67040-S4182-A2 P-TO252 Q67040-S4134 SPD08N05L SPU08N05L Text: SPD 08N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • Logic Level • dv/dt rated	Original	08N05L SPD08N05L P-TO252 Q67040-S4134 P-TO251 SPU08N05L Q67040-S4182-A2 08n05 08N05L P-TO252 Q67040-S4134 SPD08N05L SPU08N05L	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D	PDF
Untitled Abstract: No abstract text available Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current	OCR Scan	08N05L P-T0252 Q67040-S4134 P-T0251 SPD08N05L SPU08N05L Q67040-S4182-A2 S35bQ5 Q133777 SQT-89	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S	PDF