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    SI4896DY Price and Stock

    Vishay Siliconix SI4896DY-T1-E3

    MOSFET N-CH 80V 6.7A 8SO
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    DigiKey SI4896DY-T1-E3 Cut Tape 5,200 1
    • 1 $2.2
    • 10 $1.496
    • 100 $2.2
    • 1000 $0.81654
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    SI4896DY-T1-E3 Digi-Reel 5,200 1
    • 1 $2.2
    • 10 $1.496
    • 100 $2.2
    • 1000 $0.81654
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    SI4896DY-T1-E3 Reel 5,000 2,500
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    ES Components SI4896DY-T1-E3
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    New Advantage Corporation SI4896DY-T1-E3 5,000 1
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    • 10000 $0.2326
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    Vishay Siliconix SI4896DY-T1-GE3

    MOSFET N-CH 80V 6.7A 8SO
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    DigiKey SI4896DY-T1-GE3 Cut Tape 4,453 1
    • 1 $2.2
    • 10 $1.496
    • 100 $2.2
    • 1000 $0.81654
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    SI4896DY-T1-GE3 Digi-Reel 4,453 1
    • 1 $2.2
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    • 1000 $0.81654
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    SI4896DY-T1-GE3 Reel 2,500 2,500
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    Vishay Intertechnologies SI4896DY-T1-GE3

    Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4896DY-T1-GE3)
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    Avnet Americas SI4896DY-T1-GE3 Reel 5,000 13 Weeks 2,500
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    Mouser Electronics SI4896DY-T1-GE3 3,341
    • 1 $1.74
    • 10 $1.41
    • 100 $1.06
    • 1000 $0.875
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    Verical SI4896DY-T1-GE3 5,000 2,500
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    SI4896DY-T1-GE3 2,395 6
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    Arrow Electronics SI4896DY-T1-GE3 Cut Strips 2,395 13 Weeks 1
    • 1 $1.568
    • 10 $1.3487
    • 100 $1.0318
    • 1000 $1.0185
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    Newark SI4896DY-T1-GE3 Cut Tape 16,607 1
    • 1 $2.6
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    • 100 $1.78
    • 1000 $1.07
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    SI4896DY-T1-GE3 Reel 2,500
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    SI4896DY-T1-GE3 Reel 2,500
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    TTI SI4896DY-T1-GE3 Reel 30,000 2,500
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    EBV Elektronik SI4896DY-T1-GE3 14 Weeks 2,500
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    New Advantage Corporation SI4896DY-T1-GE3 1,967 1
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    Vishay Intertechnologies SI4896DY-T1-E3

    Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4896DY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4896DY-T1-E3 Reel 2,500 13 Weeks 2,500
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    Mouser Electronics SI4896DY-T1-E3 2,817
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    • 10000 $0.903
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    Verical SI4896DY-T1-E3 7,500 2,500
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    SI4896DY-T1-E3 2,500 2,500
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    • 10000 $1.372
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    SI4896DY-T1-E3 1,181 8
    • 1 -
    • 10 $1.4639
    • 100 $1.0316
    • 1000 $0.7849
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    Arrow Electronics SI4896DY-T1-E3 7,500 13 Weeks 2,500
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    SI4896DY-T1-E3 Cut Strips 1,181 13 Weeks 1
    • 1 $1.8921
    • 10 $1.4639
    • 100 $1.0316
    • 1000 $0.7849
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    Newark SI4896DY-T1-E3 Cut Tape 2,500
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    SI4896DY-T1-E3 Reel 2,500
    • 1 -
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    SI4896DY-T1-E3 Reel 2,500
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    TTI SI4896DY-T1-E3 Reel 30,000 2,500
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    Avnet Asia SI4896DY-T1-E3 15 Weeks 2,500
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    Component Electronics, Inc SI4896DY-T1-E3 8
    • 1 $3.85
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    • 100 $2.88
    • 1000 $2.5
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    EBV Elektronik SI4896DY-T1-E3 14 Weeks 2,500
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    Vishay Intertechnologies SI4896DY-T1

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    Bristol Electronics SI4896DY-T1 2,439
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    SI4896DY-T1 2,400
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    Find more SI4896DY price and stock on Findchips.com

    SI4896DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4896DY Vishay Intertechnology N-Channel 80-V (D-S) MOSFET Original PDF
    SI4896DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET Original PDF
    Si4896DY SPICE Device Model Vishay N-Channel 80-V (D-S) MOSFET Original PDF
    SI4896DY-T1 Vishay Intertechnology N-Channel 80-V (D-S) MOSFET Original PDF
    SI4896DY-T1 Vishay Siliconix N-Channel 80-V (D-S) MOSFET Original PDF
    SI4896DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 6.7A 8-SOIC Original PDF
    SI4896DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 6.7A 8SOIC Original PDF

    SI4896DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4896DY www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4896DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 9.5 0.022 at VGS = 6.0 V 8.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4896DY 2002/95/EC Si4896DY-T1-E3 Si4896DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 9.5 0.022 at VGS = 6.0 V 8.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4896DY 2002/95/EC Si4896DY-T1-E3 Si4896DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4896DY

    Abstract: Si4896DY-T1
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 9.5 0.022 @ VGS = 6.0 V 8.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4896DY Si4896DY-T1 (with Tape and Reel)


    Original     		PDF Si4896DY Si4896DY-T1 08-Apr-05

    Si4896DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4896DY 16-Apr-01

    Si4896DY

    Abstract: No abstract text available
    Text: Si4896DY New Product Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 9.5 0.022 @ VGS = 6.0 V 8.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4896DY S-01838--Rev. 21-Aug-00

    74597

    Abstract: AN609 Si4896DY
    Text: Si4896DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4896DY AN609 01-Jun-07 74597

    Si4896DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4896DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4896DY New Product Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 9.5 0.022 @ VGS = 6.0 V 8.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4896DY S-01838--Rev. 21-Aug-00

    Si4896DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4896DY N-Channel 80-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4896DY

    Untitled

    Abstract: No abstract text available
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 9.5 0.022 at VGS = 6.0 V 8.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4896DY 2002/95/EC Si4896DY-T1-E3 Si4896DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4896DY-T1-GE3

    Abstract: Si4896DY Si4896DY-T1-E3
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 9.5 0.022 at VGS = 6.0 V 8.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4896DY 2002/95/EC Si4896DY-T1-E3 Si4896DY-T1-GE3 18-Jul-08

    Si4896DY

    Abstract: Si4896DY-T1-E3 Si4896DY-T1-GE3
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 9.5 0.022 at VGS = 6.0 V 8.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4896DY 2002/95/EC Si4896DY-T1-E3 Si4896DY-T1-GE3 11-Mar-11

    Si4896DY

    Abstract: Si4896DY-T1
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 9.5 0.022 @ VGS = 6.0 V 8.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4896DY Si4896DY-T1 (with Tape and Reel)


    Original     		PDF Si4896DY Si4896DY-T1 S-03950--Rev. 26-May-03

    Untitled

    Abstract: No abstract text available
    Text: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 9.5 0.022 at VGS = 6.0 V 8.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4896DY 2002/95/EC Si4896DY-T1-E3 Si4896DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    multiple winding Transformer

    Abstract: LT3837 Snubber Design pulse transformer if 0309 Power MOSFET Cross Reference Guide 2N3906 B0540W BAS16 FMMT618 FMMT718
    Text: LT3837 Isolated No-Opto Synchronous Flyback Controller FEATURES DESCRIPTION n The LT 3837 is an isolated switching regulator controller designed for medium power flyback topologies. A typical application is 10W to 60W with the part powered from a DC supply.


    Original     		PDF LT3837 50kHz 250kHz 16-Lead LT3837 LT3781/LT1698 LTC3803 OT-23 200kHz LTC3806 multiple winding Transformer Snubber Design pulse transformer if 0309 Power MOSFET Cross Reference Guide 2N3906 B0540W BAS16 FMMT618 FMMT718

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    flyback feedback

    Abstract: step down transformer winding ratio "secondary side controller" transformer n-channel 230 AC to 18V ac transformer design 6TPE220MI boost ridley FL 10-9 flyback PCB layout flyback transformer for medical regulation using optoisolator feedback
    Text: LT3837 Isolated No-Opto Synchronous Flyback Controller FEATURES DESCRIPTION n The LT 3837 is an isolated switching regulator controller designed for medium power flyback topologies. A typical application is 10W to 60W with the part powered from a DC supply.


    Original     		PDF LT3837 50kHz 250kHz 16-Lead LT3837 LT3781/LT1698 LTC3803 OT-23 200kHz LTC3806 flyback feedback step down transformer winding ratio "secondary side controller" transformer n-channel 230 AC to 18V ac transformer design 6TPE220MI boost ridley FL 10-9 flyback PCB layout flyback transformer for medical regulation using optoisolator feedback

    smps control ic LED

    Abstract: SER1360 10uh LTC3783 Voltage 14.4v regulator 15A SMPS 9V power CDEP147NP-100MC 24 volt output smps design datasheet High Power LED smps 12 volt B2100
    Text: advertisement Versatile High Power LED Driver Controller Simplifies Design Design Note 406 Ryan Huff Introduction The increased popularity of high power LEDs over the last several years has challenged electronic engineers to come up with accurate and efficient, yet simple drive


    Original     		PDF 20kHz LTC3783EFE Si7852DP DN406 LTC3783 dn406f smps control ic LED SER1360 10uh Voltage 14.4v regulator 15A SMPS 9V power CDEP147NP-100MC 24 volt output smps design datasheet High Power LED smps 12 volt B2100

    Untitled

    Abstract: No abstract text available
    Text: LT3837 Isolated No-Opto Synchronous Flyback Controller FEATURES DESCRIPTION Senses Output Voltage Directly from Primary Side Winding—No Optoisolator Required n Synchronous Driver for High Efficiency n Supply Voltage Range 4.5V to 20V n Accurate Regulation Without User Trims


    Original     		PDF LT3837 50kHz 250kHz 16-Lead DFN-10, MSOP-10E 200kHz 3837fd