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    SGSP363 Search Results

    SGSP363 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGSP363 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP363 STMicroelectronics Shortform Data Book 1988 Short Form PDF

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    Untitled

    Abstract: No abstract text available
    Text: 3 0E P • 7121237 0 G 2 1 CT H 5 ■ ^ T V 2 > °M 3 / Z T S G S -T H O M S O N s G SGSP363 * J M * M ^(Q i[Li irö«n(gS_ SGSP367 S " T H M S N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 V qss 250 V 200 V ^DS(on)


    OCR Scan     		PDF SGSP363 SGSP367 OS-10V SGSP363 SGSP36' 003000LÂ

    SGSP363

    Abstract: sgsp367
    Text: SGSP363 SGSP367 r s 7 SGS-THOMSON ^ li1 siô isï®iiLi ns®i«iBei N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 v oss 250 V 200 V ^D S on •d 0.45 0 0.33 Q 10 A 12 A • HIGH SPEED SWITCHING APPLICATIONS • TELECOMMUNICATION APPLICATIONS


    OCR Scan     		PDF SGSP363 SGSP367 SGSP367

    p367

    Abstract: sgsp467 P467 sgsp463 sgsp567 SGSP363 sgsp563 P3B7 ic isd 1932 SGSP367
    Text: s G S-THOMSON 07E D ‘ . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 D O D iT ô ^ a 7* 3 ^ ^ fi " “1.1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF SGSP363/P367 SGSP463/P467 SGSP563/P567 SGSP363 SGSP463 SGSP563 O-220 OT-93 SGSP367 SGSP467 p367 P467 sgsp567 P3B7 ic isd 1932

    SGSP363

    Abstract: SGSP367
    Text: S 7 J MTM SCS-THOMSON sUieraò M gi SGSP363 SGSP367 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 VDSS 250 V 200 V ^DS(on) 0.45 0 0.33 Q 10 A 12 A • HIGH SPEED SWITCHING APPLICATIONS • TELECOMMUNICATION APPLICATIONS • RATED FOR UNCLAMPED INDUCTIVE


    OCR Scan     		PDF SGSP363 SGSP367 SGSP367 O-220

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		PDF IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1

    ISOWATT220

    Abstract: No abstract text available
    Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30


    OCR Scan     		PDF O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI

    sgs*P381

    Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
    Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177


    OCR Scan     		PDF P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    8n20

    Abstract: SGSP363 SEFM8N18 SEFM8N20
    Text: S G S-THOtlSON 07E D | 73C 17 58 9 ^ ' •, 1 % f,ii 'v SEFM8N18 SEFMN820 SEFP8N18 ^ SEFP8N20 ; M-CHANNEL POWER MOS TRANSISTORS ABSOLUTE MAXIMUM RATINGS V qs b !g m Ptot ^ s tff T¡ 7 ^ 3 % // ! HIGH SPEED SWITCHING APPLICATIONS V js D 1 . These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SEFM8N18 SEFMN820 SEFP8N18 SEFP8N20 /200V 300/ts, SGSP363 C-314 8n20 SEFM8N20

    TSD4M450V

    Abstract: TSD4M250V IRF740 smd Isotop SGS100MA010D1 SGSP363 TSD4M150V IRF621 IRF621FI IRF622
    Text: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100


    OCR Scan     		PDF IRFP150 IRFP150FI SGS100MA010D1 TSD4M150V SGS150MA010D1 IRF623 IRF623FI IRF621 IRF621FI IRF622 TSD4M450V TSD4M250V IRF740 smd Isotop SGSP363

    ISOWATT220

    Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
    Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00


    OCR Scan     		PDF STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI O-220 ISOWATT22Û ISOWATT22Q ISOWATT220 MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382

    sgs*P381

    Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
    Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50


    OCR Scan     		PDF OT-82 OT-194 SGSP222 SGSP201 SGSP230 SGSP239 O-220 SGSP358 MTP15N05L STLT19 sgs*P381 ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239

    IRFP 740

    Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
    Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7


    OCR Scan     		PDF IRF742FI IRF740 IRF740FI SGSP475 SGSP575 IRF350 IRFP350FI TSD4M350V IRF823 IRF823FI IRFP 740 SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M351V 220 to 110 power

    sgs*P381

    Abstract: IRFp150 To3 package bu245a BR 1300
    Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50


    OCR Scan     		PDF OT-82 OT-194 SGSP222 SGSP201 SGSP230 SGSP239 O-220 SGSP358 MTP15N05L STLT19 sgs*P381 IRFp150 To3 package bu245a BR 1300

    IRF740 smd

    Abstract: TSD4M250V IRF6205 IRF722FI SGS BUZ32 SGSP475 IRF621 IRF621FI IRF622 IRF622FI
    Text: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100


    OCR Scan     		PDF IRFP150 IRFP150FI SGS100MA010D1 TSD4M150V SGS150MA010D1 IRF623 IRF623FI IRF621 IRF621FI IRF622 IRF740 smd TSD4M250V IRF6205 IRF722FI SGS BUZ32 SGSP475 IRF622FI

    pnp transistor 1000v

    Abstract: mos Turn-off Thyristor applications of mos controlled thyristor 1000V 2A BJT SGSP363
    Text: n ^ rz 7 # , S G S -T H O M S O N 5 [L [I T [H ] M D © Ì T E C H N IC A L N O TE AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS (High Injection MOS) devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


    OCR Scan     		PDF