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    SG1000GXH26 Search Results

    SG1000GXH26 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SG1000GXH26 Toshiba INVERTER APPLICATION Scan PDF

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    snubber diode

    Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
    Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11


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    PDF SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


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    PDF SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEM ICONDUCTOR T O SH IB A TECHNICAL SG 1000GXH26 DATA LOW SNUBBER TYPE SG1000GXH26 Unit in mm INVERTER APPLICATION 43MAX- 4500V I T ( R M S ) = 500A Repetitive Peak Off-State Voltage R.M.S. On-State Current Peak Turn-Off Current


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    PDF SG1000GXH26) 1000GXH26 43MAX- SG1000GXH26 SG1Q0QGXH26-4*

    Gate Turn-off Thyristor

    Abstract: thyristor 1000A
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SG1000GXH26 LO W SN UBBER TYPE SG1000GXH26 SGIOOOGXH26 Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S. On-State Current : lT(RMS) = 500A Peak Turn-Off Current


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    PDF SG1000GXH26 SGIOOOGXH26) SG1000GXH26 00A//ws Gate Turn-off Thyristor thyristor 1000A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SG1000GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 4500V • R.M.S. On-State Current: h RMS = -<2! 500A • Peak Turn-Off Current: 't g q m = 1 0 0 0 A • Critical Rate of Rise of On-State Current: d i/d t = 600A/JIS


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    PDF SG1000GXH26 00A/JIS 10OOV/

    SG1000GXH26

    Abstract: No abstract text available
    Text: T O S H IB A SG1000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG1000GXH26 Unit in mm INVERTER APPLICATION 43MAX. VDRM = 4500 V lT RMS = 500 A :TGQM = !000 A d i/d t = 600 A / jus dv / dt = 1000 V / jus Ü M AXIM UM RATINGS SYMBOL RATING CHARACTERISTIC


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    PDF SG1000GXH26 SG1000GXH26

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL SG1000GXH26 DATA LOW SNUBBER TYPE SG1000GXH26J Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S. On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current


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    PDF SG1000GXH26 SG1000GXH26J 500AlTGQM= 13-75B1A SG1000GXH26) -500m SG1000GXH26

    500EXH21

    Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
    Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that


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    PDF SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX

    gate turn off thyristors

    Abstract: 500EXH21 800gxhh21 800exh21
    Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that


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    PDF 1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21