Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEPTEMBER1996 Search Results

    SEPTEMBER1996 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    September 1996 Linear Technology Linear Technology Chronicle Original PDF

    SEPTEMBER1996 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TLC2254

    Abstract: TLC2254A TLC2254AID TLC2254AMFK TLC2254CD TLC2254ID TLC2254MFK TLC2254Y 40401-803 tlc22541
    Text: TLC2254, TLC2254A, TLC2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER QUADRUPLE OPERATIONAL AMPLIFIERS SLOS142B – DECEMBER 1994 – REVISED SEPTEMBER1996 D D D D D Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original     		PDF TLC2254, TLC2254A, TLC2254Y SLOS142B SEPTEMBER1996 TLC2254A) TLC2254 TLC2254A TLC2254AID TLC2254AMFK TLC2254CD TLC2254ID TLC2254MFK TLC2254Y 40401-803 tlc22541

    VNW100N04

    Abstract: No abstract text available
    Text: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP


    Original     		PDF VNW100N04 O-247 O-247 VNW100N04, VNW100N04

    AN874

    Abstract: DTV110D DTV64D DTV82D
    Text: AN874 APPLICATION NOTE HIGH FREQUENCIES DAMPER DIODES INTRODUCTION The trend in new monitors is for ever increasing switching frequencies of the horizontal deflection stage: 64kHz to 110kHz. ST has developed new 1500V Damper diodes DTV64D-DTV82D-DTV110D using a new silicon structure


    Original     		PDF AN874 64kHz 110kHz. DTV64D-DTV82D-DTV110D) AN874 DTV110D DTV64D DTV82D

    EQUIVALENT TRANSISTOR bc547

    Abstract: SHRINK56 TRANSISTOR c104 transistor c114 chip STV0042 STV0056A twin lnb 243-kHz SEL5618
    Text: STV0056A SATELLITE SOUND AND VIDEO PROCESSOR SOUND • TWO INDEPENDENT SOUND DEMODULATORS ■ PLL DEMODULATION WITH 5-10MHz FREQUENCY SYNTHESIS ■ PROGRAMMABLE FM DEMODULATOR BANDWIDTH ACCOMODATING FM DEVIATIONS FROM ±30kHz TILL ±400kHz ■ PROGRAMMABLE 50/75µs, J17 OR NO


    Original     		PDF STV0056A 5-10MHz 30kHz 400kHz SHRINK56 EQUIVALENT TRANSISTOR bc547 SHRINK56 TRANSISTOR c104 transistor c114 chip STV0042 STV0056A twin lnb 243-kHz SEL5618

    pulse generator 30hz

    Abstract: LV14 TEA2037A TEA2117 D1N4002 TEA2037 1N4002 1N4003 1N4148 12 pin flyback monitor
    Text: TEA2037A HORIZONTAL AND VERTICAL DEFLECTION MONITOR FEATURES SUMMARY • DIRECT LINE DARLINGTON DRIVE Figure 1. Package ■ DIRECT FRAME-YOKE DRIVE ± 1A ■ COMPOSITE VIDEO SIGNAL INPUT CAPABILITY ■ FRAME OUTPUT PROTECTION AGAINST SHORT CIRCUITS ■ PLL


    Original     		PDF TEA2037A 15kHz 100kHz 120Hz TEA2037A TEA2117 pulse generator 30hz LV14 D1N4002 TEA2037 1N4002 1N4003 1N4148 12 pin flyback monitor

    VNW100N04

    Abstract: No abstract text available
    Text: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP


    Original     		PDF VNW100N04 O-247 O-247 VNW100N04, VNW100N04

    TRANSISTOR c104

    Abstract: videocrypt STV0042 STV0056A TP50A op-amp VCA RF SHRINK56 Amploc
    Text: STV0056A SATELLITE SOUND AND VIDEO PROCESSOR Figure 1. Package SOUND • TWO INDEPENDENT SOUND DEMODULATORS ■ PLL DEMODULATION WITH 5-10MHz FREQUENCY SYNTHESIS ■ PROGRAMMABLE FM DEMODULATOR BANDWIDTH ACCOMODATING FM DEVIATIONS FROM ±30kHz TILL ±400kHz


    Original     		PDF STV0056A 5-10MHz 30kHz 400kHz SHRINK56 TRANSISTOR c104 videocrypt STV0042 STV0056A TP50A op-amp VCA RF SHRINK56 Amploc

    TEA2037A

    Abstract: 1N4002 1N4003 1N4148 LV14 TEA2117 P418K
    Text: TEA2037A HORIZONTAL AND VERTICAL DEFLECTION MONITOR FEATURES SUMMARY • DIRECT LINE DARLINGTON DRIVE Figure 1. Package ■ DIRECT FRAME-YOKE DRIVE ± 1A ■ COMPOSITE VIDEO SIGNAL INPUT CAPABILITY ■ FRAME OUTPUT PROTECTION AGAINST SHORT CIRCUITS ■ PLL


    Original     		PDF TEA2037A 15kHz 100kHz 120Hz TEA2037A TEA2117 1N4002 1N4003 1N4148 LV14 P418K

    hp5385a

    Abstract: DCS-1800 LMX2335L LMX2336L OPERATING INSTRUCTIONS NATIONAL SEMICONDUCTOR LMX2336L EVALUATION BOARD LMX2336L LMX2335LTMX
    Text: t ß GOfibfifi? bl4 National ADVANCE INFORMATION September1996 Semiconductor LMX2335L/LMX2336L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications LMX2335L LMX2336L 1.1 GHz/1.1 GHz 2.0 GHz/1.1 GHz General Description The LMX2335L and LMX2336L are monolithic, integrated


    OCR Scan     		PDF LMX2335L/LMX2336L LMX2335L LMX2336L LMX2336L LMX2335L/36L LMX2335L/0) hp5385a DCS-1800 OPERATING INSTRUCTIONS NATIONAL SEMICONDUCTOR LMX2336L EVALUATION BOARD LMX2336L LMX2335LTMX

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)


    OCR Scan     		PDF KM68BV4002 512Kx KM68BV4002-12 170mA KM68BV4002 KM68BV4002-15 160mA KM68BV4002J 36-SOJ-400

    KM68B4002J-12

    Abstract: KM68B4002J-15
    Text: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)


    OCR Scan     		PDF KM68B4002 512Kx KM68B4002J-12 195mA KM68B4002J-13 KM68B4002J-15 KM68B4002J 36-SOJ-400 KM68B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-400 KM64BV4002 304-bit

    E4001

    Abstract: pin diagram of 7420
    Text: 128K x 32 EEPROM Module mosaic PUMA 2E4001-15/ 17/20 Issue 4.1 : September 1996 semiconductor, inc. Description The PUMA 2E4001 is a 4Mbit CMOS EEPROM organised as 128k x 32 in a 66 pin PGA ceramic package. Access times of 150, 170 and 200ns are available. The device has a user configurable output


    OCR Scan     		PDF E4001- 2E4001 200ns MIL-STD-88, D0Q274H 2E4001-15/17/20 MIL-STD-883. b35337^ 0DD5743 E4001 pin diagram of 7420

    3hM22

    Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-4QO KM64BV4002 304-bit 3hM22 pin configuration of 8251

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12 :270 mA(Max.) KM616B4002J -13 :26 5 mA(Max.)


    OCR Scan     		PDF KM616B4002 256Kx 16Bit KM616B4002J KM616B4002J 44-SOJ-400 512x16 ber-1996

    Untitled

    Abstract: No abstract text available
    Text: KM68B4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-12 195mA KM68B4002J-13 KM68B4002J-15 KM68B4002J 36-SOJ-4QO KM68B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002 -1 2 :2 4 0 mA(Max.)


    OCR Scan     		PDF KM616BV4002 16Bit KM616BV4002 KM616BV4002J: 36-SQJ-400 304-bit September-1996

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12:270 mA(Max.) KM616B4002J -13:265 mA(Max.)


    OCR Scan     		PDF KM616B4002 16Bit KM616B4002J KM616B4002J 44-SOJ-400 KM616B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM68BV4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) ; 60mA(Max.) (CMOS): 30mA(Max.) Operating KM68BV4002-12:170mA(Max.) KM68BV4002 -13:165 mA(Max.)


    OCR Scan     		PDF KM68BV4002 KM68BV4002-12 170mA KM68BV4002 KM68BV4002-15 160mA KM68BV4002J 36-SOJ-4QO 304-bit