S9014L
Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
Text: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW
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S9014LT1
S9015LT1
100mA
225mW
OT-23
100mA
062in
300uS
S9014LT1
S9014L
sot-23 MARKING O7
S9014LT1-L
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Untitled
Abstract: No abstract text available
Text: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23
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S9015LT1
S9014LT1
-100mA
OT-23
-100mA
-10mA
062in
300uS
S9015LT1
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MARKING E1 SOT23 TRANSISTOR
Abstract: S9014LT1 J6 S9014LT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9014LT1 2. EMITTER TRANSISTOR( NPN ) 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM : 0.1 A
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OT-23
OT--23
S9014LT1
S9014LT1
037TPY
950TPY
550REF
022REF
MARKING E1 SOT23 TRANSISTOR
S9014LT1 J6
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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OT-23
S9014LT1
S9015LT1
30MHz
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S9014RLT1
Abstract: No abstract text available
Text: S9014LT1 3 1 2 SOT-23 V CEO Value 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S 0.1 S9014TLT1=14T 45 50 100 100 40 3.0 WEITRON http://www.weitron.com.tw 1/ 0.1 u 0.1 u 28-Apr-2011 S9014LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)
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S9014LT1
OT-23
S9014QLT1
S9014RLT1
S9014SLT1
S9014TLT1
28-Apr-2011
OT-23
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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BCW60B
Abstract: BCW60BLT1 S9014LT1 S9015LT1
Text: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25
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BCW60BLT1
S9015LT1
100mA
225mW
100mA
062in
BCW60BLT1
S9014LT1
BCW60B
BCW60B
S9014LT1
S9015LT1
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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transistors marking HJ
Abstract: s9014lt1 S9014LT1 J6
Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .COLLECTOR FEATURES Power dissipation Pcm : 0.2 W (Tamb=25°C) Collector current 2 .4 ICM: 0.1 1.3 A Collector-base voltage ss O) CT> Csi o EE V(BR)CBo: m 50V Operating and storage junction temperature range
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OCR Scan
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OT-23
S9014LT1
cut-30MHz
S9014LT1
transistors marking HJ
S9014LT1 J6
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9014LT1
Abstract: 9014L
Text: M C C SOT-23 P la stic-E n c ap su la te T ra n s is to rs ^ S 9014L T1 TR A N SIS TO R N P N 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES à. o; Power dissipation Pcm : 0.2 W (Tamb=25"C) Collector current IC M : 0.1 A C ollector-base voltage V{B R )C B o: 50V
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OT-23
9014L
S9014LT1
9014LT1
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