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    8ohm LS

    Abstract: mosfet 600V 100A ST 0q2207 irgti0100m12 68OHM 1 GBT 400 A 1200V
    Text: Preliminary Data Sheet No. PD-9.924 irgtioioomi2 SË*] R ectifier "HALF-BRIDGE" INT-A-PAK MODULES Fast™ IGBT VCE = 1200V ^C DC = 1 .Rugged Design •Simple gate-drlve • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF 100A90245, 109S1 4flSS452 8ohm LS mosfet 600V 100A ST 0q2207 irgti0100m12 68OHM 1 GBT 400 A 1200V

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127134 rev. B 09/97 International l £ R Rectifier i r THYRISTOR/THYRISTOR k u /V 4 1 , 5 6 s e r i e s NEWADD-A-pak Power Modules Features 45 A 60 A • Electrically isolated: DBC base plate ■ 3500 VRUS isolating voltage ■ Standard JEDEC package


    OCR Scan     		PDF ULE78996 S5M52

    Untitled

    Abstract: No abstract text available
    Text: hternational I sr]Rectifier PD91306 IRFIZ46N preliminary HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated Vdss = 55 V


    OCR Scan     		PDF IRFIZ46N Liguria49 QQ237Q1