sm 0038 tsop
Abstract: LV244A CDD assembly smd 3dm
Text: S IE M E N S 8M x 72-Bit Dynamic RAM EDO-Module ECC - Module HYM 72V8025GS-50/-60 HYM 72V8035GS-50/-60 168 pin buffered DIMM Module Prelim inary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 2 bank 8 M x 72 organisation
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72-Bit
72V8025GS-50/-60
72V8035GS-50/-60
72V8025/35GS-50/-60
72-ECC
L-DlM-168-18
91x157
sm 0038 tsop
LV244A
CDD assembly
smd 3dm
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Untitled
Abstract: No abstract text available
Text: SIEMENS 10 10.1 Device Specifications C515A Device Specifications Absolute Maximum Ratings Ambient temperature under bias r A .- 40 ‘C to + 125 ‘C Storage temperature (7 ^ ).- 65 'C to + 150 ‘C
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C515A
MCS03245
235b05
01023SÃ
P-MQFP-80-1
GPM05249
P-MQFP-80-1
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transistor zo 103 MA 7S 738
Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Text: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ72
Q62702-F776
fl235b05
00b714S
transistor zo 103 MA 7S 738
SiEMENS PM 350 98
VCE05181
siemens 350 98
siemens Pm 90 87
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY11P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • S p e zie ll geeignet für Anw endungen im B ereich von 420 nm bis 1060 nm
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BPY11P
A23Sti05
BPY11
S35b05
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