Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RN2130F Search Results

    SF Impression Pixel

    RN2130F Price and Stock

    Toshiba America Electronic Components RN2130FT(TE85L,F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RN2130FT(TE85L,F) 3,144
    • 1 $0.79
    • 10 $0.79
    • 100 $0.79
    • 1000 $0.237
    • 10000 $0.158
    Buy Now

    RN2130F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2130F Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Original PDF
    RN2130FT Toshiba Original PDF
    RN2130FV Toshiba Silicon PNP Epitaxial Transistor with Resistors Original PDF

    RN2130F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN1130F

    Abstract: RN2130F
    Text: RN2130F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2130F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z 超小型パッケージ (ESM) のため超高密度実装に適しています。


    Original
    PDF RN2130F RN1130F RN1130F RN2130F

    RN1130FT

    Abstract: RN2130FT 72U-A
    Text: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor, the miniaturization of the


    Original
    PDF RN2130FT RN1130FT RN1130FT RN2130FT 72U-A

    RN1130F

    Abstract: RN2130F
    Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2130F RN1130F to150 RN1130F RN2130F

    Untitled

    Abstract: No abstract text available
    Text: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Extra small package(TESM) is applicable for extra high density fabrication. z Since bias resistance is built in the transistor, the miniaturization of the


    Original
    PDF RN2130FT RN1130FT -10esented

    Untitled

    Abstract: No abstract text available
    Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2130F RN1130F

    Untitled

    Abstract: No abstract text available
    Text: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor, the miniaturization of the


    Original
    PDF RN2130FT RN1130FT

    RN1130F

    Abstract: RN2130F
    Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2130F RN1130F RN1130F RN2130F

    Untitled

    Abstract: No abstract text available
    Text: RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit 0.8±0.05


    Original
    PDF RN2130FV RN1130FV

    RN2130FV

    Abstract: sat 1205 RN1130FV
    Text: RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplified circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit 0.8±0.05


    Original
    PDF RN2130FV RN1130FV RN2130FV sat 1205 RN1130FV

    RN1130F

    Abstract: RN2130F
    Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2130F RN1130F RN1130F RN2130F

    Untitled

    Abstract: No abstract text available
    Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2130F RN1130F

    RN1130F

    Abstract: RN2130F RN47A6
    Text: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)


    Original
    PDF RN47A6 0062g RN1130F RN2130F RN1130F RN2130F RN47A6

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original
    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Untitled

    Abstract: No abstract text available
    Text: RN1130FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor,the miniaturization of the


    Original
    PDF RN1130FT RN2130FT

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original
    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


    Original
    PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV

    RN1130F

    Abstract: RN2130F
    Text: RN1130F 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1130F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z 超小型パッケージ (ESM) のため超高密度実装に適しています。


    Original
    PDF RN1130F RN2130F RN1130F RN2130F

    RN1130F

    Abstract: RN2130F RN47A6
    Text: RN47A6 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A6 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm •


    Original
    PDF RN47A6 RN1130F RN2130F RN1130F RN2130F RN47A6

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original
    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    RN1130FT

    Abstract: RN2130FT marking X2
    Text: RN1130FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor,the miniaturization of the


    Original
    PDF RN1130FT RN2130FT 0022g RN1130FT RN2130FT marking X2

    Untitled

    Abstract: No abstract text available
    Text: RN1130FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm Simplify circuit design 1.2±0.05 0.32±0.05 With built-in bias resistors 0.8±0.05


    Original
    PDF RN1130FV RN2130FV

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original
    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)


    Original
    PDF RN47A6 0062g RN1130F RN2130F