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    RN2113F Search Results

    RN2113F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2113F Toshiba PNP transistor Original PDF
    RN2113FS Toshiba Original PDF
    RN2113FT Toshiba Original PDF
    RN2113FV Toshiba Original PDF

    RN2113F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Text: RN2112FT,RN2113FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112FT, RN2113FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original
    PDF RN2112FT RN2113FT RN2112FT, RN1112FT, RN1113FT RN2112FT RN1112FT RN1113FT RN2113FT

    RN1113F

    Abstract: RN2112F RN2113F RN1112F
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2112F RN2113F RN1112F, RN1113F RN1113F RN2113F RN1112F

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Text: RN2112F,RN2113F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112F,RN2113F ○ スイッチング用 ○ インバータ回路 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original
    PDF RN2112F RN2113F RN1112FRN1113F RN2112F RN1112F RN1113F RN2113F

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more


    Original
    PDF RN2112FS RN2113FS RN2112FS, RN1112FS, RN1113FS RN1112FS RN1113FS RN2113FS

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.2±0.05 0.15±0.05 Equivalent Circuit and Bias Resistor Values


    Original
    PDF RN2112FS RN2113FS RN2112FS, RN1112FS, RN1113FS RN1112FS RN1113FS RN2113FS

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN2112FT RN2113FT RN1112FT, RN1113FT RN1112FT RN1113FT RN2113FT

    toshiba inverter

    Abstract: RN1112FV RN1113FV RN2112FV RN2113FV
    Text: RN2112FV,RN2113FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112FV, RN2113FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm 0.22±0.05 Simplified circuit design Reduced quantity of parts and manufacturing process


    Original
    PDF RN2112FV RN2113FV RN2112FV, RN1112FV, RN1113FV toshiba inverter RN1112FV RN1113FV RN2113FV

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2112F RN2113F RN1112F, RN1113F RN2112F RN1112F RN1113F RN2113F

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2112F RN2113F RN1112F, RN1113F

    RN2112FT

    Abstract: RN1112FT RN1113FT RN2113FT
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN2112FT RN2113FT RN1112FT, RN1113FT RN1112FT RN1113FT RN2113FT

    Untitled

    Abstract: No abstract text available
    Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FS,RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enable the manufacture of ever more


    Original
    PDF RN2112FS RN2113FS RN1112FS, RN1113FS

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2112F RN2113F RN1112F, RN1113F RN2112F

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT, RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN2112FT RN2113FT RN2112FT, RN1112FT, RN1113FT RN2112FT RN1112FT RN1112FT RN1113FT RN2113FT

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2112F RN2113F RN1112F, RN1113F

    Untitled

    Abstract: No abstract text available
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN2112FT RN2113FT RN1112FT, RN1113FT

    Untitled

    Abstract: No abstract text available
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN2112FT RN2113FT RN1112FT, RN1113FT

    Untitled

    Abstract: No abstract text available
    Text: RN2112FV,RN2113FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112FV,RN2113FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm 0.22±0.05 Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF RN2112FV RN2113FV RN1112FV, RN1113FV

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN2112FS,RN2113FS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112FS,RN2113FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original
    PDF RN2112FS RN2113FS RN1112FSRN1113FS RN2112FS RN1112FS RN1113FS RN2113FS

    Untitled

    Abstract: No abstract text available
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN2112FT RN2113FT RN1112FT, RN1113FT RN2112FT

    Untitled

    Abstract: No abstract text available
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN2112FT RN2113FT RN1112FT, RN1113FT

    Untitled

    Abstract: No abstract text available
    Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN2112FS, RN2113FS


    Original
    PDF RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112F, RN2113F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan
    PDF RN2112F RN2113F RN2112F, RN1112F, RN1113F RN2112F

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N'm 7 1 1 7 F g R N'm 7 1 1 3 F • m■ ■ ■ m■ ■ ■ w ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


    OCR Scan
    PDF RN2112F RN2113F RN1112F, RN1113F RN2112F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2112F,RN2113F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112F, RN2113F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan
    PDF RN2112F RN2113F RN2112F, RN1112F, RN1113F RN2112F