ECG1355
Abstract: ECG1354 darlington amplifiers ECG1355 S-100W S-100WA power darlington 100W power amp 60w
Text: PHILIPS E C 6 INC 17E 0 bbSBTaa Q00SS3S 3 y ''- ECG1354, ECG1355 100 W, 60 W A F Power Darlington M odules Semiconductors Features * Hybrid output stage Darlington amplifiers * Flexibility to obtain desired characteristics by adding driver circuit * Easy m ounting and no need for
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Q00SS3S
ECG1354,
ECG1355
ECG1355
ECQ1355
ECG13S4
ECG1354
ECG1354
darlington amplifiers
ECG1355 S-100W S-100WA
power darlington 100W
power amp 60w
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Untitled
Abstract: No abstract text available
Text: 11E D Two-Dimensional PSD • 4E2ibQT Q00SSÔ2 1 ■ - H A M A M A T S U CORP Maximum Ratings Type No. T-<Al^S - Position Detection Error Radiant Sensitivi ZONE O ZONE B O ty at Typ. Max. Typ. Max. SOOnm Effective Sensitive Area Spectral
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Q00SSÃ
S1300
S1880
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Untitled
Abstract: No abstract text available
Text: SILICON SYSTEMS INC ITE D • 82S3US QG05S11 5 ■ SSI 32P541A mmMkm Read Data Processor June, 1989 DESCRIPTION FEATURES The SSI 32P541A is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of M FM or RLL encoded read signals.
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82S3US
QG05S11
32P541A
32P541A
24-Lead
32P541A-P
28-Lead
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Untitled
Abstract: No abstract text available
Text: . O PTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54
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OP169
OP169A,
OP169B,
OP169C
OP509
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Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N o t e s A V A I L A B L E AN62 • AN64 • AN66 U m X88C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES • Highly Integrated Microcontroller Peripheral —8K x 8 E2 Memory —2 x 8 General Purpose Bidirectional I/O Ports
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X88C75
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HXTR3685
Abstract: HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV hxtr-7011
Text: HEWLETT-PACKARD-. CMPNTS SDE D B M447SÖ4 QQOSSbb 3 El T " 31“ /? T-31'21 Low N oise Transistors HXTR-7011 Chip HXTR-7111, TX and TXV HXTR-3615, TX and TXV HXTR-3645, TX and TXV HXTR-3675, TX and TXV HSMX-3635 HSMX-3655 Technical Data Features D escription
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M447SÃ
HXTR-7011
HXTR-7111,
HXTR-3615,
HXTR-3645,
HXTR-3675,
HSMX-3635
HSMX-3655
MIL-S-19500,
HXTR3685
HXTR-7111
HXTR-3615
hxtr-3685
HXTR3
HXTR-7111TXV
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KM41C1000
Abstract: KM41C1000P km41c1000 B 1mx1 DRAM DIP
Text: SAMSUNG SEMICONDUCTOR INC T f i D Ë J 7 T t.4 1 4 E 0 0 0 5 4 ^ 3 7 - y £ - '. CMOS DRAM KM41C1000 1Mx1 Bit Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tRC KM41C1000-10 100ns 25ns 190ns KM41C1000-12 120ns
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KM41C1000
KM41C1000-10
KM41C1000-12
100ns
120ns
190ns
220ns
KM41C1000
576x1
KM41C1000P
km41c1000 B
1mx1 DRAM DIP
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