NEC JAPAN
Abstract: UPD4584 uPD4564163G5 NEC 1010 uPD4564841G5 electric scheme ca 400 w NEC JAPAN IC
Text: CORPORATION JAPAN July 2000 TRQ-00-07-339 64M SDRAM RELIABILITY REPORT This report contains reliability data on the following CMOS Synchronous DRAM products fabricated and assembled at the NEC facilities in Japan . µ PD4564441G5 Rev. “L“ µ PD4564841G5 Rev. “L”
|
Original
|
TRQ-00-07-339
PD4564441G5
PD4564841G5
PD4564163G5
Am241,
NEC JAPAN
UPD4584
uPD4564163G5
NEC 1010
uPD4564841G5
electric scheme ca 400 w
NEC JAPAN IC
|
PDF
|
apd456
Abstract: No abstract text available
Text: 9 MOS INTEGRATED CIRCUIT PD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
|
Original
|
pPD4564441
pPD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
apd456
|
PDF
|
PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed
|
Original
|
X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
|
PDF
|
8208 ns
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516DA72 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ¿/PD4564441 are assembled.
|
OCR Scan
|
MC-4516DA72
16M-WORD
72-BIT
MC-4516DA72
uPD4564441
MC-4516DA72-A10
8208 ns
|
PDF
|
LX 2262
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / PD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 (word x bit x bank , respectively.
|
OCR Scan
|
uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ¿¿PD4564441 Revision E are assembled.
|
OCR Scan
|
MC-4516DA726
72-BIT
MC-4516DA726
uPD4564441
C-4516DA726-A80
C-4516DA726-A10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
|
OCR Scan
|
uPD4564441
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
S54G5-80-9JF
PD4564441
PD4564xxx.
pPD4564xxxG5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M
|
OCR Scan
|
MC-4516DA72
72-BIT
uPD4564441
|
PDF
|
d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
|
OCR Scan
|
64M-bit
uPD4564441
864-bit
54-pin
d4564841
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /PD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description T h e ¿¿PD4564441,4664641 are high-speed 67,108,864-bit s y n c h ro n o u s d y n a m ic ra n d o m -a ccess m em ories, org a n ize d as 4,194,304x4x4 and 2,097,152x8x4 wordxbttxbank , respectively.
|
OCR Scan
|
uPD4564441
uPD4564841
64M-bit
PD4564441
864-bit
304x4x4
152x8x4
54-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,PD4564441 are assembled.
|
OCR Scan
|
MC-4516DA72
72-BIT
MC-4516DA72
uPD4564441
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
|
OCR Scan
|
64M-bit
uPD4564441
864-bit
54-pin
M12621EJBV0DS00
|
PDF
|
D14-D17
Abstract: 8js9 d45128841g5 m1408 mark code AVV MC-4516DA727LF-A75 uPD45128841 MC-4516DA727 MC-4516DA727EFA-A75 D45128
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727LF is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 64M SDRAM: ,PD4564441 are assembled, and the MC-4516DA727EFA is a 16,777,216 words by 72 bits
|
OCR Scan
|
MC-4516DA727
16M-WORD
72-BIT
MC-4516DA727LF
uPD4564441
MC-4516DA727EFA
uPD45128841
M168S-50A104
M14082EJ3V0DS00
C-4516DA727EFA]
D14-D17
8js9
d45128841g5
m1408
mark code AVV
MC-4516DA727LF-A75
MC-4516DA727
MC-4516DA727EFA-A75
D45128
|
PDF
|
integrated circuit TL 2262
Abstract: TL 2262 integrated circuit tl 2262 am
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 64M -bit Synch ro nou s D R A M 4-bank, LVTTL Description T he /PD4564441,4564841 are h igh-speed 67,108,864-bit s y n c h ro n o u s d yn a m ic ra nd o m -a cce ss m em ories,
|
OCR Scan
|
uPD4564441
uPD4564841
864-bit
304x4x4
152x8x4
54-pin
integrated circuit TL 2262
TL 2262 integrated circuit
tl 2262 am
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT PD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
|
OCR Scan
|
uPD4564441
64M-bit
PD4564441,
864-bit
54-pin
S54G5-80-9JF-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: ,PD4564441 are assembled.
|
OCR Scan
|
MC-4516DA726
72-BIT
C-4516DA726
uPD4564441
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,PD4564441 are assembled.
|
OCR Scan
|
MC-4516DA72
72-BIT
MC-4516DA72
uPD4564441
M200S-50A7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,PD4564441 Revision E are assembled.
|
OCR Scan
|
MC-4516DA726
72-BIT
MC-4516DA726
uPD4564441
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 6 4 4 4 1 -A 7 5 , 4 5 6 4 8 4 1 -A 7 5 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,PD4564441-A75, 4564841-A75 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4 and 2,097,152 x 8 x 4 word x bit x bank , respectively.
|
OCR Scan
|
64M-bit
133MHz
uPD4564441-A75
4564841-A75
864-bit
54-pin
13977EJ3V0D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT PD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
|
OCR Scan
|
uPD4564441
64M-bit
PD4564441,
864-bit
54-pin
|
PDF
|
C4516DA72
Abstract: MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726F, 4516DA726LF, 4516DA726LFB are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: ,PD4564441 are assembled, and the MC-4516DA726EFC is a
|
OCR Scan
|
MC-4516DA726
72-BIT
MC-4516DA726F,
MC-4516DA726LF,
MC-4516DA726LFB
uPD4564441
MC-4516DA726EFC
uPD45128841
M168S-50A107
13203EJ6V0D
C4516DA72
MC-4516DA726
MC-4516DA726F-A80
MC-4516DA726LF-A80
PD45128841
CDC2509
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description T h e M C -4 5 1 6 C A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of
|
OCR Scan
|
MC-4516CA724
16M-WORD
72-BIT
MC-4516CA724
PD4564441
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516DA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T h e M C -4 5 1 6 D A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of
|
OCR Scan
|
MC-4516DA724
16M-WORD
72-BIT
MC-4516DA724
PD4564441
|
PDF
|
CDC2509
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,PD4564441 Revision E are assembled.
|
OCR Scan
|
MC-4516DA726
72-BIT
MC-4516DA726
uPD4564441
CDC2509
|
PDF
|
