apd456
Abstract: No abstract text available
Text: 9 MOS INTEGRATED CIRCUIT PD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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Original
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pPD4564441
pPD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
apd456
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PDF
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LX 2262
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / PD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 (word x bit x bank , respectively.
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OCR Scan
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uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
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PDF
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d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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64M-bit
uPD4564441
864-bit
54-pin
d4564841
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /PD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description T h e ¿¿PD4564441,4664641 are high-speed 67,108,864-bit s y n c h ro n o u s d y n a m ic ra n d o m -a ccess m em ories, org a n ize d as 4,194,304x4x4 and 2,097,152x8x4 wordxbttxbank , respectively.
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OCR Scan
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uPD4564441
uPD4564841
64M-bit
PD4564441
864-bit
304x4x4
152x8x4
54-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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64M-bit
uPD4564441
864-bit
54-pin
M12621EJBV0DS00
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PDF
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MEC 1310 nu
Abstract: 4564841G db3 bl
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441,4564841 are high-speed 67,108,864-bit synchronous dynamic random-access m emories, organized as 4,194,304x4x4 and 2,097,152x8x4 wordxbitxbank , respectively.
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OCR Scan
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uPD4564441
64M-bit
PD4564441
864-bit
304x4x4
152x8x4
54-pin
U-031
S54G5-60
b4275B5
MEC 1310 nu
4564841G
db3 bl
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PDF
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d4564
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;PD4564441,4564841,4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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iPD4564441
64M-bit
uPD4564441
864-bit
54-pin
M12621EJAV0DS00
d4564
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PDF
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