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    PD431 Price and Stock

    Rochester Electronics LLC UPD431000AGW-80Y-E2

    MEMORY / SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGW-80Y-E2 Bulk 441,000 355
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    Rochester Electronics LLC UPD431000AGZ-70LL-KJH-E3-A

    SRAM 5V 1M-BIT (128K X 8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70LL-KJH-E3-A Bulk 98,000 260
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    Rochester Electronics LLC UPD431000AGZ-70LL-KJH-A

    STANDARD SRAM, 128KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70LL-KJH-A Bulk 65,196 290
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    Rochester Electronics LLC UPD431000AGW-80Y

    MEMORY / SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGW-80Y Bulk 39,652 355
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    Rochester Electronics LLC UPD431000AGZ-70X-KJH-A

    STANDARD SRAM, 128KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70X-KJH-A Bulk 35,281 260
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    Find more PD431 price and stock on Findchips.com

    PD431 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD431007 Powerex 1000V, 700A phase control dual thyristor Original PDF
    PD43-103M API Delevan SMT Power Choke Core Original PDF
    PD431207 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD43-123M API Delevan SMT Power Choke Core Original PDF
    PD431407 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD43-152M API Delevan SMT Power Choke Core Original PDF
    PD43-153M API Delevan SMT Power Choke Core Original PDF
    PD431607 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD431807 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD43-182M API Delevan SMT Power Choke Core Original PDF
    PD43-183M API Delevan SMT Power Choke Core Original PDF

    PD431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC-8815

    Abstract: IC-3242 8815 k PD431008 UPD431008LE-15 PD431008LE-15 ic8815
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The µPD431008 is a high speed, low power, 1 048 576 bits 131 072 words by 8 bits CMOS static RAM. The µPD431008 is packed in 32-pin plastic SOJ. Feature


    Original     		PDF PD431008 128K-WORD PD431008 32-pin PD431008LE-15 PD431008LE-17 PD431008LE-20 IC-8815 IC-3242 8815 k UPD431008LE-15 PD431008LE-15 ic8815

    D431000A

    Abstract: d431000 PD431000A upd431000a
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In


    Original     		PDF PD431000A 128K-WORD PD431000A 32-pin D431000A d431000 upd431000a

    IC-8817

    Abstract: IC-3237
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The µPD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The µPD431009 is packed in 36-pin plastic SOJ. Feature


    Original     		PDF PD431009 128K-WORD PD431009 36-pin PD431009LE-15 PD431009LE-17 PD431009LE-20 IC-8817 IC-3237

    upd431008ll

    Abstract: upd431008
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The µ PD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    Original     		PDF PD431008L PD431008L 32-pin PD431008LLE-A17 PD431008LLE-A20 PD431008L. PD431008LLE: upd431008ll upd431008

    UPD431232L

    Abstract: uPD431232LGF-A8 uPD431232 M1046 UPD431232LGF-A12
    Text: DATA SHEET SHEET MOS INTEGRATED CIRCUIT µ PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The µ PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This


    Original     		PDF PD431232L 32K-WORD 32-BIT PD431232L 768-word 32-bit 100-pin S100GF-65-8ET PD431232L. UPD431232L uPD431232LGF-A8 uPD431232 M1046 UPD431232LGF-A12

    D431000

    Abstract: D431000A PD431000A-X D4310 d431 PD431000A Power resistor 0,25R uPD431000A-X
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A-X 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µ PD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A-X has two chip enable pins (CE1, CE2) to extend the capacity. A and B versions are wide


    Original     		PDF PD431000A-X PD431000A-X 32-pin D431000 D431000A D4310 d431 PD431000A Power resistor 0,25R uPD431000A-X

    81-095

    Abstract: No abstract text available
    Text: PD431 VISHAY Vishay Semiconductors PD431 Package Dimensions in mm 96 12196 Document Number 81095 Rev. 1.2, 03-Jun-04 www.vishay.com 1 PD431 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to


    Original     		PDF PD431 03-Jun-04 D-74025 81-095

    PD431000A

    Abstract: PD431000AGZ-70LL-KJH
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The μPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In


    Original     		PDF PD431000A 128K-WORD PD431000A 32-pin M8E0904E PD431000AGZ-70LL-KJH

    PD431000A-X

    Abstract: PD431000 85X MARKING RESISTOR
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The μPD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original     		PDF PD431000A-X 128K-WORD PD431000A-X 32-pin PD431000 85X MARKING RESISTOR

    PD431000A

    Abstract: PD431000 TSOP8 PD431000AGW-85LL PD431000AGZ-70LL-KJH PD431000AGW-85L PD431000AGW PD431000AGW-70L PD431000AGZ-70LL-KJH-A PD431000A-70L
    Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD431000A 1M ビット CMOS スタティック RAM 128K ワードx8 ビット μPD431000A は 1,048,576 ビット（131,072 ワード×8 ビット）の CMOS スタティック RAM です。


    Original     		PDF PD431000A PD431000A-xxL PD431000A-xxLL PD431000A-Axx PD431000A-Bxx M11657JJE5 PD431000AGZ-xxLL-KJH-A PD431000AGZ-xxLL-KKH-A PD431000A PD431000 TSOP8 PD431000AGW-85LL PD431000AGZ-70LL-KJH PD431000AGW-85L PD431000AGW PD431000AGW-70L PD431000AGZ-70LL-KJH-A PD431000A-70L

    uPD431000AGW-70X-A

    Abstract: PD431000A-X uPD431000AGZ-B15X-KJH-A uPD431000AGZ-B12X-KJH-A uPD431000AGZ-B10X-KJH-A
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original     		PDF PD431000A-X 128K-WORD PD431000A-X 32-pin uPD431000AGW-70X-A uPD431000AGZ-B15X-KJH-A uPD431000AGZ-B12X-KJH-A uPD431000AGZ-B10X-KJH-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The μPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In


    Original     		PDF PD431000A 128K-WORD PD431000A 32-pin

    upd431016

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The µ PD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    Original     		PDF PD431016L 16-BIT PD431016L 44-pin I/O16) PD431016 PD431016L. PD431016LLE: upd431016

    uPD431018

    Abstract: uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431018 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 18-BIT Description The µPD431018 is a high speed, low power, 1 179 648 bits 65 536 words by 18 bits CMOS static RAM. The µPD431018 are packed in 44-pin plastic SOJ. Feature


    Original     		PDF PD431018 64K-WORD 18-BIT PD431018 44-pin I/O10 I/O18) uPD431018 uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993

    d431008

    Abstract: No abstract text available
    Text: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿PD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.


    OCR Scan     		PDF PD431008 128K-WORD iPD431008 jt/PD431008 32-pin Acc400 040-o 016to 008tg P431008 d431008

    Untitled

    Abstract: No abstract text available
    Text: SEC ¿/PD4314 4 ,0 9 6 X 4-B IT STATIC CMOS RAM N E C Electronics Inc. Description Pin Configuration T h e ¿ PD4314 is a 4,096-w ord by 4-b it static random access m em ory fabricated with advanced silicon-gate technology. Its unique circuitry, using C M O S peri­


    OCR Scan     		PDF uPD4314 096-word /PD4314 20-pin 20-Pln S2-001637A

    nec pd431000

    Abstract: UPD431000
    Text: SEC PD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /PD431000 is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the j*PD431000 a high­


    OCR Scan     		PDF uPD431000 32-Pln /iPD431000 072-word PD431000 pPD431000 32-pin pPD431000 MIH-S74W nec pd431000

    PD431000

    Abstract: uPD431000
    Text: N E C ELECTRONICS INC 36E bHS7SSS ]> 003213^ NEC 2 I NECE PD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. T ~ W r r 3 ;3 .- lH r Description Pin Configuration the /*PD431Q00 Is a 131,072-word by 8-bit static RAM fabricated with advanced sillcon-gate technology.


    OCR Scan     		PDF uPD431000 PD431Q00 072-word PD431000 pPD43l000 32-pln 32-Pin L42752S DG32147 iPD431000

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.


    OCR Scan     		PDF PD431016 64K-WORD 16-BIT PD431016 44-pin 005T347 b427525 PP431016 //PD431016.

    Untitled

    Abstract: No abstract text available
    Text: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­


    OCR Scan     		PDF PD431009 /JPD431009 072-word /L/PD431009 iPD431009 36-pin 36-pin, 400-mil

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.


    OCR Scan     		PDF PD431016L 64K-WORD 16-BIT //PD431016L /iPD431016L 44-pin 431016LLE-A PD431016LLE-A20 /iPD431016L. /PD431016LLE:

    Untitled

    Abstract: No abstract text available
    Text: SEC PD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­


    OCR Scan     		PDF fiPD431009 /PD431009 072-word /L/PD431009 36-pin 36-pin, 400-mil jLfPD431009

    IC-3237

    Abstract: 431009le
    Text: MOS INTEGRATED CIRCUIT PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT D e s c rip tio n The ^PD431009 is a high speed, lo w pow er, 1 179 072 bits 131 072 w o rds by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ. F e a tu re


    OCR Scan     		PDF uPD431009 128K-WORD PD431009 36-pin PD431009LE-15 /PD431009LE-17 431009LE-20 PD431009. iiPD431009LE: IC-3237 431009le

    PD4311

    Abstract: PD4311A
    Text: SEC //PD4311 1 6 ,3 8 4 x 1-BIT STATIC CMOS RAM NEC Electronics Inc. Description The //PD4311 is a 16,384-word by 1-bit static random access m em ory fabricated w ith advanced silicon-gate technology. Its unique circu itry, using CMOS peri­ pheral circu its and N -channel m em ory cells w ith


    OCR Scan     		PDF uPD4311 384-word the//PD4311 //PD4311 20-pin 20-Pln S3M404432A 3M-004631A 3-001637A PD4311 PD4311A