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    PD431 Price and Stock

    Rochester Electronics LLC UPD431000AGW-80Y-E2

    MEMORY / SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGW-80Y-E2 Bulk 441,000 355
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    Rochester Electronics LLC UPD431000AGZ-70LL-KJH-E3-A

    SRAM 5V 1M-BIT (128K X 8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70LL-KJH-E3-A Bulk 104,251 260
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    Rochester Electronics LLC UPD431000AGZ-70LL-KJH-A

    STANDARD SRAM, 128KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70LL-KJH-A Bulk 67,751 290
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    Rochester Electronics LLC UPD431000AGW-80Y

    MEMORY / SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGW-80Y Bulk 39,652 355
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    Rochester Electronics LLC UPD431000AGZ-70X-KJH-A

    STANDARD SRAM, 128KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70X-KJH-A Bulk 35,281 260
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    Find more PD431 price and stock on Findchips.com

    PD431 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PD431007 Powerex 1000V, 700A phase control dual thyristor Original PDF
    PD43-103M API Delevan SMT Power Choke Core Original PDF
    PD431207 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD43-123M API Delevan SMT Power Choke Core Original PDF
    PD431407 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD43-152M API Delevan SMT Power Choke Core Original PDF
    PD43-153M API Delevan SMT Power Choke Core Original PDF
    PD431607 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD431807 Powerex POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) Original PDF
    PD43-182M API Delevan SMT Power Choke Core Original PDF
    PD43-183M API Delevan SMT Power Choke Core Original PDF

    PD431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC-8815

    Abstract: IC-3242 8815 k PD431008 UPD431008LE-15 PD431008LE-15 ic8815
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The µPD431008 is a high speed, low power, 1 048 576 bits 131 072 words by 8 bits CMOS static RAM. The µPD431008 is packed in 32-pin plastic SOJ. Feature


    Original     		PDF PD431008 128K-WORD PD431008 32-pin PD431008LE-15 PD431008LE-17 PD431008LE-20 IC-8815 IC-3242 8815 k UPD431008LE-15 PD431008LE-15 ic8815

    D431000A

    Abstract: d431000 PD431000A upd431000a
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In


    Original     		PDF PD431000A 128K-WORD PD431000A 32-pin D431000A d431000 upd431000a

    IC-8817

    Abstract: IC-3237
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The µPD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The µPD431009 is packed in 36-pin plastic SOJ. Feature


    Original     		PDF PD431009 128K-WORD PD431009 36-pin PD431009LE-15 PD431009LE-17 PD431009LE-20 IC-8817 IC-3237

    upd431008ll

    Abstract: upd431008
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The µ PD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    Original     		PDF PD431008L PD431008L 32-pin PD431008LLE-A17 PD431008LLE-A20 PD431008L. PD431008LLE: upd431008ll upd431008

    UPD431232L

    Abstract: uPD431232LGF-A8 uPD431232 M1046 UPD431232LGF-A12
    Text: DATA SHEET SHEET MOS INTEGRATED CIRCUIT µ PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The µ PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This


    Original     		PDF PD431232L 32K-WORD 32-BIT PD431232L 768-word 32-bit 100-pin S100GF-65-8ET PD431232L. UPD431232L uPD431232LGF-A8 uPD431232 M1046 UPD431232LGF-A12

    D431000

    Abstract: D431000A PD431000A-X D4310 d431 PD431000A Power resistor 0,25R uPD431000A-X
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A-X 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µ PD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A-X has two chip enable pins (CE1, CE2) to extend the capacity. A and B versions are wide


    Original     		PDF PD431000A-X PD431000A-X 32-pin D431000 D431000A D4310 d431 PD431000A Power resistor 0,25R uPD431000A-X

    81-095

    Abstract: No abstract text available
    Text: PD431 VISHAY Vishay Semiconductors PD431 Package Dimensions in mm 96 12196 Document Number 81095 Rev. 1.2, 03-Jun-04 www.vishay.com 1 PD431 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to


    Original     		PDF PD431 03-Jun-04 D-74025 81-095

    PD431000A

    Abstract: PD431000AGZ-70LL-KJH
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The μPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In


    Original     		PDF PD431000A 128K-WORD PD431000A 32-pin M8E0904E PD431000AGZ-70LL-KJH

    PD431000A-X

    Abstract: PD431000 85X MARKING RESISTOR
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The μPD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original     		PDF PD431000A-X 128K-WORD PD431000A-X 32-pin PD431000 85X MARKING RESISTOR

    PD431000A

    Abstract: PD431000 TSOP8 PD431000AGW-85LL PD431000AGZ-70LL-KJH PD431000AGW-85L PD431000AGW PD431000AGW-70L PD431000AGZ-70LL-KJH-A PD431000A-70L
    Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD431000A 1M ビット CMOS スタティック RAM 128K ワードx8 ビット μPD431000A は 1,048,576 ビット（131,072 ワード×8 ビット）の CMOS スタティック RAM です。


    Original     		PDF PD431000A PD431000A-xxL PD431000A-xxLL PD431000A-Axx PD431000A-Bxx M11657JJE5 PD431000AGZ-xxLL-KJH-A PD431000AGZ-xxLL-KKH-A PD431000A PD431000 TSOP8 PD431000AGW-85LL PD431000AGZ-70LL-KJH PD431000AGW-85L PD431000AGW PD431000AGW-70L PD431000AGZ-70LL-KJH-A PD431000A-70L

    uPD431000AGW-70X-A

    Abstract: PD431000A-X uPD431000AGZ-B15X-KJH-A uPD431000AGZ-B12X-KJH-A uPD431000AGZ-B10X-KJH-A
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original     		PDF PD431000A-X 128K-WORD PD431000A-X 32-pin uPD431000AGW-70X-A uPD431000AGZ-B15X-KJH-A uPD431000AGZ-B12X-KJH-A uPD431000AGZ-B10X-KJH-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The μPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In


    Original     		PDF PD431000A 128K-WORD PD431000A 32-pin

    upd431016

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The µ PD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    Original     		PDF PD431016L 16-BIT PD431016L 44-pin I/O16) PD431016 PD431016L. PD431016LLE: upd431016

    uPD431018

    Abstract: uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431018 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 18-BIT Description The µPD431018 is a high speed, low power, 1 179 648 bits 65 536 words by 18 bits CMOS static RAM. The µPD431018 are packed in 44-pin plastic SOJ. Feature


    Original     		PDF PD431018 64K-WORD 18-BIT PD431018 44-pin I/O10 I/O18) uPD431018 uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993

    d431008

    Abstract: No abstract text available
    Text: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿PD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.


    OCR Scan     		PDF PD431008 128K-WORD iPD431008 jt/PD431008 32-pin Acc400 040-o 016to 008tg P431008 d431008

    Untitled

    Abstract: No abstract text available
    Text: SEC ¿/PD4314 4 ,0 9 6 X 4-B IT STATIC CMOS RAM N E C Electronics Inc. Description Pin Configuration T h e ¿ PD4314 is a 4,096-w ord by 4-b it static random access m em ory fabricated with advanced silicon-gate technology. Its unique circuitry, using C M O S peri­


    OCR Scan     		PDF uPD4314 096-word /PD4314 20-pin 20-Pln S2-001637A

    nec pd431000

    Abstract: UPD431000
    Text: SEC PD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /PD431000 is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the j*PD431000 a high­


    OCR Scan     		PDF uPD431000 32-Pln /iPD431000 072-word PD431000 pPD431000 32-pin pPD431000 MIH-S74W nec pd431000

    PD431000

    Abstract: uPD431000
    Text: N E C ELECTRONICS INC 36E bHS7SSS ]> 003213^ NEC 2 I NECE PD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. T ~ W r r 3 ;3 .- lH r Description Pin Configuration the /*PD431Q00 Is a 131,072-word by 8-bit static RAM fabricated with advanced sillcon-gate technology.


    OCR Scan     		PDF uPD431000 PD431Q00 072-word PD431000 pPD43l000 32-pln 32-Pin L42752S DG32147 iPD431000

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.


    OCR Scan     		PDF PD431016 64K-WORD 16-BIT PD431016 44-pin 005T347 b427525 PP431016 //PD431016.

    Untitled

    Abstract: No abstract text available
    Text: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­


    OCR Scan     		PDF PD431009 /JPD431009 072-word /L/PD431009 iPD431009 36-pin 36-pin, 400-mil

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.


    OCR Scan     		PDF PD431016L 64K-WORD 16-BIT //PD431016L /iPD431016L 44-pin 431016LLE-A PD431016LLE-A20 /iPD431016L. /PD431016LLE:

    Untitled

    Abstract: No abstract text available
    Text: SEC PD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­


    OCR Scan     		PDF fiPD431009 /PD431009 072-word /L/PD431009 36-pin 36-pin, 400-mil jLfPD431009

    IC-3237

    Abstract: 431009le
    Text: MOS INTEGRATED CIRCUIT PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT D e s c rip tio n The ^PD431009 is a high speed, lo w pow er, 1 179 072 bits 131 072 w o rds by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ. F e a tu re


    OCR Scan     		PDF uPD431009 128K-WORD PD431009 36-pin PD431009LE-15 /PD431009LE-17 431009LE-20 PD431009. iiPD431009LE: IC-3237 431009le

    PD4311

    Abstract: PD4311A
    Text: SEC //PD4311 1 6 ,3 8 4 x 1-BIT STATIC CMOS RAM NEC Electronics Inc. Description The //PD4311 is a 16,384-word by 1-bit static random access m em ory fabricated w ith advanced silicon-gate technology. Its unique circu itry, using CMOS peri­ pheral circu its and N -channel m em ory cells w ith


    OCR Scan     		PDF uPD4311 384-word the//PD4311 //PD4311 20-pin 20-Pln S3M404432A 3M-004631A 3-001637A PD4311 PD4311A