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    PA507TE Search Results

    PA507TE Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    UPA507TE-T1-AT Renesas Electronics Corporation P-Channel MOSFET With Schottky Barrier Diode For Switching, TMM, /Embossed Tape Visit Renesas Electronics Corporation
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    PA507TE Price and Stock

    Rochester Electronics LLC UPA507TE-T1-AT

    P-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPA507TE-T1-AT Bulk 1,015
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3
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    Renesas Electronics Corporation UPA507TE-T1-AT

    Small Signal Field-Effect Transistor, 2A, 20V, P-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics UPA507TE-T1-AT 141,000 1
    • 1 $0.2844
    • 10 $0.2844
    • 100 $0.2673
    • 1000 $0.2417
    • 10000 $0.2417
    Buy Now

    PA507TE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hz nec

    Abstract: SC-95 UPA507TE
    Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven


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    PDF PA507TE PA507TE hz nec SC-95 UPA507TE

    SC-95

    Abstract: No abstract text available
    Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven


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    PDF PA507TE PA507TE SC-95

    SC-95

    Abstract: PA507TE-T1-A
    Text: データ・シート ショットキバリア・ダイオード内蔵 MOS 形電界効果トランジスタ MOS FET with Schottky Barrier Diode PA507TE ショットキバリア・ダイオード内蔵 P チャネル MOS FET スイッチング用 μ PA507TE は,1.8 V 電源系による直接駆動が可能な


    Original
    PDF PA507TE PA507TE PA507TE-T1-A PA507TE-T2-A G16626JJ2V0DS M8E02 SC-95 PA507TE-T1-A

    SC-95

    Abstract: PA507TE-T1-A
    Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm The μ PA507TE is a switching device, which can be driven directly 0.32 +0.1 –0.05 0.65 –0.15 DESCRIPTION +0.1


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    PDF PA507TE PA507TE SC-95 PA507TE-T1-A

    SC-95

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PA507TE PA507TE G16626JJ2V0DS M8E02 SC-95

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    SC-95

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF