NX5315EH
Abstract: NX5315EH-AZ
Text: LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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PL10531EJ03V0DS
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Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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NX5315EH
Abstract: PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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gpon laser
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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A1276
Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Text: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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laser gpon
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NX5315
Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ
Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:
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Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:
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