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    NE68839 Search Results

    NE68839 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE68839 NEC Semiconductor Selection Guide Original PDF
    NE68839 NEC NPN Silicon Transistor. Original PDF
    NE68839R NEC NPN Silicon Transistor. Original PDF
    NE68839R-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68839R-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68839-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68839-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    NE68839 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE68839

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE68839 SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 time seconds Parameter Units BF 135.7 XCJC 0.56 capacitance


    Original     		PDF NE68839 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 032e-9 68ONAL 24e-12 NE68839

    MU 350

    Abstract: IC 7443 datasheet nec 3012 NE68939 NE68939-T1 NE69039 74245 20 pin ic 74626 30057
    Text: DATA SHEET SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE68939 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.


    Original     		PDF NE68939 NE68939 MU 350 IC 7443 datasheet nec 3012 NE68939-T1 NE69039 74245 20 pin ic 74626 30057

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    NE68839

    Abstract: NE68939 NE69039 NE69039-T1-A PC2771T
    Text: NEC'S NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039 +0.2 2.8 -0.3


    Original     		PDF NE69039 NE69039 NE68839 NE68939 NE69039-T1-A PC2771T

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor
    Text: SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939


    Original     		PDF NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor

    84t MARKING

    Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10


    Original     		PDF NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 84t MARKING marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: NE68839 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ NE68939 NE68939-T1 NE69039 PC2771T 2.tx transistor 53J5 31J1
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939


    Original     		PDF NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NE68839 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ NE68939-T1 NE69039 PC2771T 2.tx transistor 53J5 31J1

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    NE68830-T1-A

    Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68830-T1-A 2SC5193 2SC5194 2SC5195 NE68818 NE68819 NE68830 NE68833 131300

    NE68819

    Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68833-T1 NE68839-T1 NE68839R-T1 NE68819 ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE68818 NE68830

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: NE68839 NE68939 NE69039 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039


    Original     		PDF NE69039 NE69039 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ NE68839 NE68939 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    BJT BF 331

    Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68800 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 BJT BF 331 NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195

    IN510

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939


    Original     		PDF NE68939 NE68939 DEC-j50 -j100 9-j11 24-Hour IN510

    80500 TRANSISTOR

    Abstract: LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 34-6393/FAX 80500 TRANSISTOR LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195

    Vo 80500 TRANSISTOR

    Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A


    OCR Scan     		PDF NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400

    NE68839

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP 0 F = 1.9 GHz, Vce = 3.6 V, Class AB, Duty 1/8 Units in mm PACKAGE OUTLINE 39 +0.2 2 .8 4 PIN MINI MOLD PACKAGE: NE69039


    OCR Scan     		PDF NE69039 NE69039 24-Hour NE68839

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan     		PDF OT-23) NE68018

    NE68019

    Abstract: NE68839 NE68018 NE68719
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3


    OCR Scan     		PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719

    NE68839

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIALTRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F= 1.9 GHz, V c e = 3.6 V, Class AB, Duty 1/8 Units in mm PACKAGE OUTLINE 39 4 PIN MINI MOLD PACKAGE: NE69039


    OCR Scan     		PDF NE69039 NE69039 NE69039-T1 NE68839 NE68939 uPC2771T NE6S939 NE68839