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    NE5520 Search Results

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    NE5520 Price and Stock

    California Eastern Laboratories (CEL) NE5520379A-T1A-A

    RF MOSFET LDMOS 3.2V 79A
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    California Eastern Laboratories (CEL) NE5520279A-EVPW09

    EVAL BOARD NE5520279A 900MHZ
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    California Eastern Laboratories (CEL) NE5520379A-EVPW04-A

    EVAL BOARD NE5520379A
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    California Eastern Laboratories (CEL) NE5520379A-EVPW09-A

    Sub-GHz Development Tools For NE5520379A-A Power at 900 MHz
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    Mouser Electronics NE5520379A-EVPW09-A
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    California Eastern Laboratories (CEL) NE5520279A-EVPW24

    RF Development Tools For NE5520279A-A Power at 2.4 GHz
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    Mouser Electronics NE5520279A-EVPW24
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    Find more NE5520 price and stock on Findchips.com

    NE5520 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE5520279A California Eastern Laboratories 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520279A NEC NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520279A-EVPW04 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520279A Original PDF
    NE5520279A-EVPW09 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520279A 900MHZ Original PDF
    NE5520279A-EVPW24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520279A 2.4GHZ Original PDF
    NE5520279A-T1 NEC 3.2 V, 2 W, L&S band medium power silicon LD-MOSFET Original PDF
    NE5520279A-T1 NEC 3.2 V Operation Silicon RF Power LDMOS FET for 1.8 GHz 1.6 W Transmission Amplifiers Original PDF
    NE5520279A-T1A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520279A-T1-A California Eastern Laboratories 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520279A-T1A NEC 3.2 V Operation Silicon RF Power LDMOS FET for 1.8 GHz 1.6 W Transmission Amplifiers Original PDF
    NE5520379A California Eastern Laboratories 3.2V 3W L/S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520379A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520379A NEC 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS Original PDF
    NE5520379A-EVPW04-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520379A Original PDF
    NE5520379A-T1 NEC 3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers Original PDF
    NE5520379A-T1A California Eastern Laboratories 3.2 V 3 W L&s Band Medium Power Silicon LD-MOSFET(261) Original PDF
    NE5520379A-T1A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520379A-T1A NEC 3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers Original PDF
    NE5520379A-T1A NEC NECs 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. Original PDF
    NE5520379A-T1A-A California Eastern Laboratories NECs 3.2v 3w L/s Band Medium Power Silicon Ld-mosfet Original PDF

    NE5520 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE5511279A

    Abstract: NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS
    Text: NEC Silicon LD-MOS FETs www.cel.com Silicon LD-MOSFETs Typical Specifications @ TC = 25°C Part Number POUT dBm TYP NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR 26.0 11 40.0 32.0 35.5 33.0 40.4 VDS (V) IDSQ (mA) Package Code 19 3.0 200 79A 0.9 27


    Original     		PDF NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR NE5511279A NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS

    4069 NOT GATE IC

    Abstract: NEC LDMOS
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS

    DCS1800

    Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


    Original     		PDF NE5520279A NE5520279A DCS1800 NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec

    DCS1800

    Abstract: NE5520279A NE5520279A-T1
    Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15


    Original     		PDF NE5520279A 0X001 NE5520279A HS350-P3 DCS1800 NE5520279A-T1

    NE5520379A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    7530D

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


    Original     		PDF NE5520279A NE5520279A DCS1800 7530D

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a


    Original     		PDF NE5520379A NE5520379A IR260 VP215 WS260 HS350-P3 PU10122EJ03V0DS

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    PU10123EJ01V1DS

    Abstract: R-4775
    Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


    Original     		PDF NE5520279A NE5520279A DCS1800 PU10123EJ01V1DS R-4775

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		PDF NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC

    J50 mosfet

    Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec

    NE5520379A

    Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec

    DCS1800

    Abstract: NE5520279A NE5520279A-T1-A
    Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V Gate 1.2 MAX.


    Original     		PDF NE5520279A 0X001 NE5520279A DCS1800 NE5520279A-T1-A

    4069 NOT GATE IC

    Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A NE5520379A-EVAL 4069 NOT GATE IC GSM900 MCH185A180JK MCH185A4R7CK NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec

    DCS1800

    Abstract: NE5520279A NE5520279A-T1A
    Text: PRELIMINARY DATA SHEET 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A 1.5 ± 0.2 4.2 Max Source • HIGH OUTPUT POWER:


    Original     		PDF NE5520279A NE5520279A DCS1800 NE5520279A-T1A

    LDMOS NEC

    Abstract: No abstract text available
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ������������� ����


    Original     		PDF NE5520379A GSM900 HS350-P3 WS260 VP215 IR260 LDMOS NEC

    J50 mosfet

    Abstract: LDMOS NEC
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A GSM900 24-Hour J50 mosfet LDMOS NEC

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


    Original     		PDF NE5520279A NE5520279A DCS1800 IR260 VP215 WS260 HS350-P3 PU10123EJ03V0DS

    2052-5636-02 100pf

    Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION


    Original     		PDF NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    LVDT Signal Conditioner

    Abstract: LVDT ne5520 NE5520N Signetics NE5520 Application note "lvdt Signal Conditioner" lvdt and information "Signal Conditioner" lvdt block diagram signetics linear
    Text: NE5520 Signetics LVDT Signal Conditioner Product Specification Linear Products PIN CONFIGURATIONS DESCRIPTION FEATURES Th e N E 5520 is a signal conditioning circuit for use with Linear Variable Differ­ ential Transformers LVD T . The chip includes a low distortion amplitude sta­


    OCR Scan     		PDF NE5520 NE5520 20kHz LVDT Signal Conditioner LVDT NE5520N Signetics NE5520 Application note "lvdt Signal Conditioner" lvdt and information "Signal Conditioner" lvdt block diagram signetics linear

    LVDT

    Abstract: ne5520 NE5520N LVDT Signal Conditioner NE5520D NE5520F "lvdt Signal Conditioner" circuit of signal conditioning lvdt "Signal Conditioner" SINE WAVE oscillator
    Text: NE5520 NOT FOR NEW DESIGN LVDT Signal Conditioner Product Specification D ESCR IPTIO N The NE5520 is a signal conditioning circuit for use with Linear Variable Differ­ ential Transform ers LVDT . The chip includes a low distortion am plitude sta­ ble sine wave oscillator with program m a­


    OCR Scan     		PDF NE5520 NE5520 20kHz 1000k LVDT NE5520N LVDT Signal Conditioner NE5520D NE5520F "lvdt Signal Conditioner" circuit of signal conditioning lvdt "Signal Conditioner" SINE WAVE oscillator

    LVDT Signal Conditioner

    Abstract: NE5520 lvdt Signal Conditioning 14pin IC
    Text: NE5520 NOT FOR NEW DESIGN LVDT Signal Conditioner Product Specification PIN CONFIGURATIONS DESCRIPTION FEATURES The NE5520 is a signal conditioning circuit for use with Linear Variable Differ­ ential Transformers LVDT . The chip includes a low distortion amplitude sta­


    OCR Scan     		PDF NE5520 NE5520 20kHz OP1B460S 1000K OP1B500S OP1B510S TC211905 LVDT Signal Conditioner lvdt Signal Conditioning 14pin IC