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    NDP708AE Search Results

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    NDP708AE Price and Stock

    Rochester Electronics LLC NDP708AE

    60A, 80V, 0.022OHM, N-CHANNEL MO
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    DigiKey NDP708AE Bulk 133
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    • 1000 $2.26
    • 10000 $2.26
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    Fairchild Semiconductor Corporation NDP708AE

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    Bristol Electronics NDP708AE 15,094
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    Quest Components NDP708AE 225
    • 1 $4.365
    • 10 $2.1825
    • 100 $1.8915
    • 1000 $1.8915
    • 10000 $1.8915
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    Rochester Electronics NDP708AE 3,240 1
    • 1 $2.17
    • 10 $2.17
    • 100 $2.04
    • 1000 $1.84
    • 10000 $1.84
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    NDP708AE Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDP708AE Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDP708AE National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDP708AE National Semiconductor TO-220AB DMOS Power MOSFETS Scan PDF
    NDP708AEL National Semiconductor TO-220AB Logic Level DMOS Power MOSFETS Scan PDF

    NDP708AE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDB708A

    Abstract: NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B NDP708BE
    Text: N May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original
    PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 NDB708BE NDP708BE

    NDB708A

    Abstract: NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B NDP708BE
    Text: May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


    Original
    PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 NDB708BE NDP708BE

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    NDP406BL

    Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
    Text: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5


    OCR Scan
    PDF O-220AB NDP710AEL NDP710AL NDP710BEL NDP710BL NDP610AEL NDP610AL NDP610BEL NDP610BL NDP510AEL NDP406BL NDP508AEL MTP3055EL ndp706al NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL

    10V4Z

    Abstract: 708B
    Text: P A I R C H May 1994 I I - D M IC D N D U C T Q R ! NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e se N -ch an nel e n h a n ce m e n t m ode po w e r field


    OCR Scan
    PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 10V4Z 708B

    Untitled

    Abstract: No abstract text available
    Text: M ay 1994 N NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan
    PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708

    708B

    Abstract: NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B
    Text: May 1994 N NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-ehannel enhancem ent mode power field effect transistors are produced using National's


    OCR Scan
    PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 708B

    NDP505A

    Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
    Text: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B NDP610A 65 13/10 26 80


    OCR Scan
    PDF O-220AB NDP710A NDP710AE NDP710B NDP710BE NDP610A NDP610AE NDP610B NDP610BE NDP510A NDP505A NDP705AE NDP605A NDP405B NDP510AE NDP510B

    NDP406BL

    Abstract: DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610BL P610B DP505
    Text: «NSCS Power MOSFETS continued N Channel r D S (o n | I q/^ G S (Volts) Min Device 100 NDP710AEL •n Pn r D S ( « l ) ® * d/ V B S (Amps) (Watts) (m ii) (Amps/Volts) Max Max Max 38 21/5 42 42 21/5 40 Min 150 NDP706AEL N DP710AL NDP710BEL Device (m a )


    OCR Scan
    PDF O-220AB NDP710AEL DP710AL NDP710BEL NDP710BL NDP610AEL DP610AL NDP610BEL P610BL NDP510AEL NDP406BL DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610B DP505