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    MTH6N100E Search Results

    MTH6N100E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTH6N100E On Semiconductor TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate Original PDF
    MTH6N100E Unknown FET Data Book Scan PDF

    MTH6N100E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: U425
    Text: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.


    Original
    PDF MTH6N100E/D O-218AC AN569 U425

    MTH13N50

    Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
    Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:


    Original
    PDF MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50

    MTE100N05

    Abstract: MTE200N05 MTE120N18 MTH7N50 MTE120N20 MTE100N06 MTE200N06 MTE65N15 MTH5N95 MTH6N100
    Text: - 280 - S s MTE65N15 MTE75N08 MTE75N10 MTE100N05 MTE100N06 MTE120N18 MTE120N20 MTE130N12 MTE13ÜN15 MTE150N08 MTE150N10 MTE200N05 MTE200N06 MTG9N50E MTG15P10 MTG20N20 MTH5N100 MTH5N95 MTH6N100 MTH6N100E MTH6N55 MTH6N6Û MTH6N85 MTH6N9Û MTH7N45 MTH7N50 MTH8N35


    OCR Scan
    PDF MTE65N15 CASE353-01 MTE75N08 MTE75N10 MTH6N90 T0-218AC MTH7H45 MTH7N50 MTE100N05 MTE200N05 MTE120N18 MTE120N20 MTE100N06 MTE200N06 MTH5N95 MTH6N100

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC ÍXSTRS/R F> HbE D Order this data sheet by MTH6N100E/D b3b72S4 QÜ'lQ'nb 4 MOTOROLA • i SEMICONDUCTOR S TECHNICAL DATA ■ MTH6N100E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silico n Gate T M O S P O W E R FET


    OCR Scan
    PDF b3b72S4 MTH6N100E/D MTH6N100E O-218AC C6676Ó

    2N3904

    Abstract: AN1040 AN569 DS3902 MTG4N100E MTH6N100E
    Text: Order this data sheet by MTG4N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTG4N100E Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES rDS on = 2.0 OHMS M AX 1000 VOLTS


    OCR Scan
    PDF MTG4N100E/D MTG4N100E/D 2N3904 AN1040 AN569 DS3902 MTG4N100E MTH6N100E