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    MTH15N35 Search Results

    MTH15N35 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTH15N35 Motorola Switchmode Datasheet Scan PDF
    MTH15N35 Motorola European Master Selection Guide 1986 Scan PDF
    MTH15N35 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTH15N35 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTH15N35 Unknown FET Data Book Scan PDF

    MTH15N35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTH15N35 CASE OUTLINE: TO-218 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-218 MTH15N35

    GG 06

    Abstract: VN35010
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35


    Original     		PDF UFN733 2N6759 SFN333 MTM5N35 MTP5N35 VN35010 GG 06

    MTH13N50

    Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
    Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:


    Original     		PDF MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50

    MTH13N50

    Abstract: 3N50 motorola MTH13N50 13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651
    Text: P.O. BOX 20912 • PHOENIX, ARIZONA 85036 MTH13N45 MTH13N50 MTH15N35 MTH15N40 D esign er’s D ata Sheet 13 and 15 AMPERES N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FETs These TMOS Power FETs are designed for medium voltage,


    OCR Scan     		PDF 13N45 13N50 15N35 15N40 MTH13N45/D MTH13N45/D MTH13N50 3N50 motorola MTH13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651

    1RF350

    Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
    Text: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n


    OCR Scan     		PDF IRF350 IRF351 IRF352 JRF350, 1RF350, 1RF352 IRF350, JRF351 1RF350 Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    irf 3110

    Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
    Text: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,


    OCR Scan     		PDF IRF350 IRF351 IRF352 IRF350, irf 3110 IRF3503 IRf 334 IRf 92 0151 irf352 C055

    MTH13N50

    Abstract: 218AC MTH6K MTH20P08 MTH35N06 MTH35N15 MTH50N05E MTH8N90 TO218AC MTH15N35
    Text: - m m £ tt * Vos or € £ Vg s V W. (Ta=25‘ C) ÍD Ig s s Pd Vg s Jd s s th) xi fà ft 1D S ( o n ) Vd s = 'te (V) * /CH * /CH (A) (W) (nA) Vg s (V) (HA) Vd s (V) min m ax (V) (V) g fs iD(on) Ciss Coss Crss & m m n V g s =0 (max) Id (mA) *typ (0) Vg s


    OCR Scan     		PDF MTH6K90 O-218AC MTK8P18 T0-218AC MTH8P20 HTH13N45 MTH40N05 MTH40N06 MTH13N50 218AC MTH6K MTH20P08 MTH35N06 MTH35N15 MTH50N05E MTH8N90 TO218AC MTH15N35

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    Motorola transistor 388 TO-204AA

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed


    OCR Scan     		PDF IRF350 O-204AA) 97A-01 97A-03 O-204AE) Motorola transistor 388 TO-204AA

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTH13N50

    Abstract: MTH40N10 MTH7N50 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth5n100 mth7n50 Transistor
    Text: POWER TRAN SISTO RS — TM O S PLASTIC continued Plastic TM OS Power MO SFETs — TO-218AC G D S rDS(on) @ <D V BR(DSS) (Volts) Min (Ohms) Max (Amp) 1000 3 2.5 Device 950 900 550 500 450 400 350 MTH5N100 'D(Cont) (Amp) M ax PD @ Te = 25°C (W ans) M ax 5


    OCR Scan     		PDF O-218AC MTH5N100 MTH5N95 MTH6N90 MTH6N85 MTH6N60 MTH8N60 MTH6N55 MTH8N55 MTH7N50 MTH13N50 MTH40N10 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth7n50 Transistor

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643