Untitled
Abstract: No abstract text available
Text: [M IC R O N 128K SRAM MT5C1189 X 9 SRAM 1 2 8 K x 9 SRAM FEATURES • High speed: 15*, 17, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Automatic CE pow er down • All inputs and outputs are TTL-compatible • Single +5V ±10% pow er supply
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MT5C1189
32-Pin
MT5C11B9
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jc 817
Abstract: ir 0588 0588 N1H1
Text: niCRON SEMICONDUCTOR INC b?E hi 1 1 5 ^ D 000^7^3 MRN S11A I 128K X 9 SRAM DIE | M IC R O N SEMICONDUCTOR tSC M 073 • SRAM DIE 128K X 9 SRAM Asynchronous MT5C1189S11A and Synchronous (MT58C1289S11A) GENERAL PHYSICAL SPECIFICATIONS • Wafer thickness = 18.5 mils ±0.5 mils
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MT5C1189S11A)
MT58C1289S11A)
150mm
jc 817
ir 0588
0588
N1H1
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MT5C1189
Abstract: cc1179
Text: MICRON SEMICONDU CTOR INC b?E D • blllSHT ODQ'iaññ GfiS ■ MRN M IC R O N B MT5C1189 128KX 9 SRAM 5E.MICOMDI.CTOP. INC 128 K x 9 S R A M S R A M FEATURES • High speed: 15*, 17,20,25 and 35ns • High-performance, low-power, CMOS double-metal process
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T5C1189
128KX
32-Pin
MT5C1189
\21V2,
MTSC1189
cc1179
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MT5C1189
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E ]> b l l l S 4 cî 0003S00 T47 [M I C R O N 128K SRAM IÏ1RN MT5C1189 X 9 S RAM 128Kx 9 SRAM FEATURES • High speed: 15*, 17,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Automatic CE power down • All inputs and outputs are TTL compatible
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0003S00
MT5C1189
128Kx
32-Pin
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Untitled
Abstract: No abstract text available
Text: M IC R O N 128K SRAM M T 5C 1189 X 9 SR AM 128Kx 9 SRAM FEATURES PIN ASSIGNMENT (Top View • High speed: 15*, 17, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Automatic CE power down • All inputs and outputs are TTL compatible
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128Kx
32-Pin
MT5C1189
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Untitled
Abstract: No abstract text available
Text: • M T5C1189 TEUWULtXj'' IH«. SRAM 128Kx 9 SRAM WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 17, 20, 25 and 35ns A utom atic C hip Enable pow er dow n All inputs and outputs are TTL com patible H igh-perform ance, low -pow er, CM O S double-m etal
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T5C1189
128Kx
32-Pin
Dr00ucts
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AAA1M304
Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Text: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188
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CY7C106
CY7C185
AS7C1028
AS7C164
AS7C259
AS7C256
AS7C1024
AAA1M304
tc514256
UM6164
um6164b
DYNAMIC RAM CROSS REFERENCE
tc554256
M5M44C256
MB82005
NMB Semiconductor
IS61C256A
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