MT3S08T
Abstract: No abstract text available
Text: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • · Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Maximum Ratings (Ta = 25°C) Characteristics
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MT3S08T
MT3S08T
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MT3S08T
Abstract: No abstract text available
Text: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • Sutable for use in an OSC • Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Maximum Ratings (Ta = 25°C) Characteristics
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MT3S08T
000707EAA1
MT3S08T
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Untitled
Abstract: No abstract text available
Text: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • • Unit: mm Suitable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Absolute Maximum Ratings (Ta = 25°C)
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MT3S08T
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543e
Abstract: 014E 200E 800E MT3S08T
Text: MT3S08T SPICE parameters UCB SPICE2G6 20020724 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S08T 1 2 3 3 18 2.014E-02 9 19 2.014E-02 6 18 2.260E-10 6 19
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MT3S08T
014E-02
260E-10
800E-13
346E-14
543e
014E
200E
800E
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Untitled
Abstract: No abstract text available
Text: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • • Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Maximum Ratings (Ta = 25°C) Characteristics
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MT3S08T
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MT3S06S
Abstract: MT3S06T MT3S08T MT6L54E
Text: MT6L54E Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No. Q1: SSM (TESM)
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MT6L54E
MT3S06S
MT3S06T)
MT3S08T
MT3S06S
MT3S06T
MT3S08T
MT6L54E
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Untitled
Abstract: No abstract text available
Text: MT6L56E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L56E
MT3S07S
MT3S07T)
MT3S08T
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Untitled
Abstract: No abstract text available
Text: MT6L54S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L54S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6
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MT6L54S
MT3S06S
MT3S06T)
MT3S08T
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MT3S07S
Abstract: MT3S07T MT3S08T MT6L56S
Text: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6
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MT6L56S
MT3S07S
MT3S07T)
MT3S08T
MT3S07S
MT3S07T
MT3S08T
MT6L56S
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MT3S06S
Abstract: MT3S06T MT3S08T MT6L54E
Text: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No.
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MT6L54E
MT3S06S
MT3S06T)
MT3S08T
MT3S06S
MT3S06T
MT3S08T
MT6L54E
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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Untitled
Abstract: No abstract text available
Text: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No.
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MT6L54E
MT3S06S
MT3S06T)
MT3S08T
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Untitled
Abstract: No abstract text available
Text: MT6L56E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L56E
MT3S07S
MT3S07T)
MT3S08T
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Untitled
Abstract: No abstract text available
Text: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6
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MT6L56S
MT3S07S
MT3S07T)
MT3S08T
40ments,
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VHF-UHF Band oscillator
Abstract: MT3S06S MT3S06T MT3S08T MT6L54E
Text: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices are built in to the super-thin and ultra super mini 6 pin package: ES6 Q1: SSM (TESM)
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MT6L54E
MT3S06S
MT3S06T)
MT3S08T
VHF-UHF Band oscillator
MT3S06S
MT3S06T
MT3S08T
MT6L54E
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TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
TOSHIBA RF Power Module S-AV24
diode varicap BB 112
varicap v147
2SC386A
2SK1310
3SK78
2sc5066
V101 varicap diode
1SV149
2SK192
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MT3S06S
Abstract: MT3S06T MT3S08T MT6L54S
Text: MT6L54S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L54S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6
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MT6L54S
MT3S06S
MT3S06T)
MT3S08T
MT3S06S
MT3S06T
MT3S08T
MT6L54S
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Untitled
Abstract: No abstract text available
Text: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit : mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L56S
MT3S07S
MT3S07T)
MT3S08T
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3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
3SK73
S-AV24
3SK121
3SK114
TOSHIBA RF Power Module S-AV24
3SK101
S-AU82VL
diode varicap BB 112
2SC2328
3SK112
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Untitled
Abstract: No abstract text available
Text: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices are built in to the super-thin and ultra super mini 6 pin package: ES6 Q1: SSM (TESM)
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MT6L54E
MT3S06S
MT3S06T)
MT3S08T
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Untitled
Abstract: No abstract text available
Text: MT6L56E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit : mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L56E
MT3S07S
MT3S07T)
MT3S08T
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BB 505 Varicap Diode
Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
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3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
BB 505 Varicap Diode
s-av24
V101 varicap diode
varicap v101
varicap v147
varicap v103
replacement for 2sc5088 horizontal transistors
TOSHIBA S-AV29H
Zener c9v
3SK114
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FET K161
Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
FET K161
S-AV24
k192a
Transistor C1923
C1923 transistor
k161 jfet
fet k241
k161 mosfet
C1923 transistor base
c2498 TRANSISTOR
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FET K161
Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
FET K161
Transistor C2216
Transistor k161
k161 jfet
k192a
Transistor C2668
fet k241
k161 mosfet
Transistor C2347
Transistor C1923
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