210E
Abstract: 600E MT3S06FS 1200E-01
Text: MT3S06FS SPICE parameters UCB SPICE 2G6 20020704 NET LIST .SUBCKT MT3S06FS 1 2 3 Le1 Le2 Ceg1 Ceg2 Lb1 Lb2 Cbg1 Cbg2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 3 6 6 9 6 0 9 0 2 5 5 8 5 0 8 0 1 4 4 7 4 0 7 0 5 6 7 8 7 9 9 20 12 20 8 17
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MT3S06FS
920E-11
910E-14
770E-14
210E
600E
1200E-01
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MT3S06FS
Abstract: No abstract text available
Text: MT3S06FS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S06FS 単位: mm • 雑音特性が優れています。 2 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.2±0.05 Buffer 用途に優れています。 0.6±0.05 0.35±0.05
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MT3S06FS
MT3S06FS
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Untitled
Abstract: No abstract text available
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic
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MT6L57AFS
MT3S06T
MT3S06FS)
MT3S04AT
MT3S04AFS)
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MT6L76FS
Abstract: No abstract text available
Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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MT6L76FS
MT3S06FS
MT3S106FS
MT6L76FS
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transistor amplifier VHF/UHF
Abstract: MT3S06FS
Text: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 8.5 dB f = 2 GHz 1 3 2 0.1±0.05 +0.02 Lead (Pb)-free. 0.8±0.05 1.0±0.05
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MT3S06FS
transistor amplifier VHF/UHF
MT3S06FS
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Untitled
Abstract: No abstract text available
Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage
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MT6L68FS
MT3S06T
MT3S06FS)
MT3S11T
MT3S11FS)
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MT3S06FS
Abstract: MT3S06T MT3S11FS MT3S11T MT6L68FS
Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)
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MT6L68FS
MT3S11FS)
MT3S06FS)
MT3S11T
MT3S06T
MT3S06FS
MT3S06T
MT3S11FS
MT3S11T
MT6L68FS
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MT6L76FS
Abstract: No abstract text available
Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10
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MT6L76FS
MT3S06FS
MT3S106FS
MT6L76FS
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MT6L58AFS
Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05
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MT6L58AFS
MT3S03AFS)
MT3S06FS)
MT3S03AT
MT3S06T
MT6L58AFS
MT3S03AFS
MT3S03AT
MT3S06FS
MT3S06T
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MT3S06FS
Abstract: No abstract text available
Text: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.35±0.05
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MT3S06FS
MT3S06FS
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MT3S06FS
Abstract: No abstract text available
Text: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.35±0.05
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MT3S06FS
MT3S06FS
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Untitled
Abstract: No abstract text available
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3
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MT6L58AFS
MT3S06T
MT3S06FS)
MT3S03AT
MT3S03AFS)
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Untitled
Abstract: No abstract text available
Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)
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MT6L68FS
MT3S06T
MT3S06FS)
MT3S11T
MT3S11FS)
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MT3S04AFS
Abstract: MT3S04AT MT3S06FS MT3S06T MT6L57AFS
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S04AT MT3S06FS (MT3S04AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05
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MT6L57AFS
MT3S04AFS)
MT3S06FS)
MT3S04AT
MT3S06T
MT3S04AFS
MT3S04AT
MT3S06FS
MT3S06T
MT6L57AFS
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Untitled
Abstract: No abstract text available
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S03AT (MT3S06FS) (MT3S03AFS) Maximum Ratings (Ta = 25°C) Characteristic
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MT6L58AFS
MT3S06T
MT3S06FS)
MT3S03AT
MT3S03AFS)
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Untitled
Abstract: No abstract text available
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.
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MT6L57AFS
MT3S06T
MT3S06FS)
MT3S04AT
MT3S04AFS)
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IC MARKING 1005 5 pin
Abstract: No abstract text available
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.
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MT6L58AFS
MT3S06T
MT3S06FS)
MT3S03AT
MT3S03AFS)
IC MARKING 1005 5 pin
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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2sc5108
Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,
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BCE0003E
2sc5108
toshiba transistors catalog
2sk3476
UHF/VHF IC transceiver
2SK403
microwave Duplexer
Am tuning varicap
Wideband MMIC VCO covers 8 GHz to 12.5 GHz
2Sk3656
microwave transceiver 3.54 GHz
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
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BCE0003F
MT4S300T
TA4032FT
MT3S111TU
JAPANESE 2SC TRANSISTOR 2010
MT4S301T
TA4029CTC
TB7602CTC
MT3S111P
JAPANESE TRANSISTOR 2SC 2010
2sk3476
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