MSARS50S20Y Search Results

MSARS50S20Y Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MSARS50S20Y		Microsemi	LOW VOLTAGE DROP STANDARD RECTIFIER		Original	PDF

MSARS50S20Y Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IR125 Abstract: DO-217AA 217A MSARS50S20Y PS11 VF10 VF11 VF12 MSARS50S20YS-1 C7001 Text: 8700 E. Thom as Road Scottsdale, AZ 85252 PH: 480 941-6300 FAX: (714) 372-8459 MSARS50S20Y MSARS50S20YR Features • • • • • • • • passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic	Original	MSARS50S20Y MSARS50S20YR MSARS50S20Y) MSARS50S20YR) MSARS50S20YS-1 IR125 DO-217AA 217A MSARS50S20Y PS11 VF10 VF11 VF12 MSARS50S20YS-1 C7001	PDF
MSARS50S20RY Abstract: MSARS50S20X MSARS50S20Y VF10 VF11 VF12 MSARS50S20RX Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSARS50S20X,Y MSARS50S20RX,Y Features PRELIMINARY • passivated mesa structure for very low leakage currents • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic (MSARS50S20Y and	Original	MSARS50S20X MSARS50S20RX MSARS50S20Y MSARS50S20RY) MSARS50S20RX) MSARS50S20X, MSARS50S20RX, 100deg 125deg MSARS50S20RY VF10 VF11 VF12	PDF
Untitled Abstract: No abstract text available Text: 8700 E. Thom as Road Scottsdale, AZ 85252 PH: 480 941-6300 FAX: (714) 372-8459 MSARS50S20Y MSARS50S20YR Features • • • • • • • • passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic	Original	MSARS50S20Y MSARS50S20YR MSARS50S20Y) MSARS50S20YR) MSARS50S20YS-1	PDF
MM158 Abstract: MSARS50S20Y PS11 VC10 Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Features MM158 PRELIMINARY • Designed for use with NiH battery cells on spacecraft • Thermally activated non-dissipative permanent battery bypass • Charge/discharge diodes are replaced by a permanent	Original	MM158 MSARS50S20Y 300ms MM158 PS11 VC10	PDF
UM1002 Abstract: 1000 volt mosfet 24501 1N5822 MSARS50S20Y SA01 SA02 SOIC-16 RGP30 24498 Text: Spring/Summer 1998 conditioning Sintered Glass Rectifiers Microsemi Chatsworth, under an exclusive agreement with Gulf Semiconductor of MSASC150H45H Surface Mount Power Schottkys China, is now offering a competitive solution to General Semiconductor's Super	Original	MSASC150H45H USB08 UM1002 1000 volt mosfet 24501 1N5822 MSARS50S20Y SA01 SA02 SOIC-16 RGP30 24498	PDF
Untitled Abstract: No abstract text available Text: Microsemi • m u Santa Ana, CA progress Pow ersti ay recnnorogy m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSARS50S20X,Y MSARS50S20RX,Y Features • • • • • • 200 Volts 50 Amps passivated mesa structure for very low leakage currents	OCR Scan	MSARS50S20X MSARS50S20RX MSARS50S20Y MSARS50S20RY) MSARS50S20RX) MSARS50S20X, MSARS50S20RX,	PDF
Untitled Abstract: No abstract text available Text: Micmsemi m m m Santa Ana, CA Progress Powered Oy Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSARS50S20X,Y MSARS50S20RX,Y Features • • • • • • 200 Volts 50 Amps passivated mesa structure for very low leakage currents	OCR Scan	MSARS50S20X MSARS50S20RX MSARS50S20Y MSARS50S20RY) MSARS50S20RX) MSARS50S20X, MSARS50S20RX,	PDF