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    MPS3390 Search Results

    MPS3390 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MPS3390 Crimson Semiconductor Transistor Selection Guide Scan PDF
    MPS3390 Micro Electronics Semiconductor Device Data Book Scan PDF
    MPS3390 Micro Electronics NPN silicon planar epitaxial transistor Scan PDF
    MPS3390 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MPS3390 Motorola NPN silicon general purpose transistor. Scan PDF
    MPS3390 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MPS3390 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPS3390 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MPS3390 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MPS3390 Semico Audio Frequency Small Signal Transistors Scan PDF
    MPS3390 Sprague Semiconductor Data Book 1977 Scan PDF
    MPS3390C Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MPS3390 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3406

    Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391


    Original     		PDF HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A 2N3406 optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631

    2sc711

    Abstract: 2SC871 2SC374 2SC2001L PA6013B 2SC631 2SC1684 R TBC338 LOW-POWER SILICON NPN PET4003
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391


    Original     		PDF HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A 2sc711 2SC871 2SC374 2SC2001L PA6013B 2SC631 2SC1684 R TBC338 LOW-POWER SILICON NPN PET4003

    mps3391

    Abstract: No abstract text available
    Text: MOTOROLA SC ÎXSTR S/R F> 6367254 MOTOROLA SC DE t3t72S4 005177^ (XSTRS/R 96D 8 1 7 7 9 F D MPS3390, MPS3391, MPS3396 thru MPS3398 M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 25 Vdc Emitter-Base Voltage


    OCR Scan     		PDF t3t72S4 MPS3390, MPS3391, MPS3396 MPS3398 O-226AA) MPS3390 MPS3391 MPS3397

    MPS3394

    Abstract: MPS3393 MPS3391 MPS3392 MPS3395 MPS3398 MPS3563 MPS3390 MPS3396 MPS3397
    Text: MPS3390 silicon thru MPS3398 NPN S IL IC O N A M P L IF IE R T R A N S IS T O R S NPN S IL IC O N A N N U L A R A M P L IF IE R T R A N S IS T O R S . designed for use in general-purpose and high-gain amplifier or driver applications. • Collector-Emitter Breakdown Voltage B V c e O = 25 Vdc (Min) @ lc = 1.0 mAdc


    OCR Scan     		PDF MPS3390 MPS3398 MPS3390 MPS3391 MPS3392 MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS3563

    pnp 2N3906 beta

    Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
    Text: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION


    OCR Scan     		PDF 2N3395 2N3396 2N3397 2N3398 2N2926 2N4401 2N4402 2N4403 MPS2713 MPS2714 pnp 2N3906 beta 2n4058 N3904 to-92hs D29E2-J1

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392

    Untitled

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min max VCE(sat) fT Cob IC VCE max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 2 2 2 2 2 4.5 10 10 10 10 - 5 12 12 12 3.5 - - 10 10 10


    OCR Scan     		PDF MPS2716 MPS2923 MPS2924 MPS2925 MPS2926 O-92A

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    t3d 18

    Abstract: No abstract text available
    Text: SPRAGUE/SENICOND 8 5 1 4 0 1 9 SP RA GU E! GROUP T3 D • ÖS13ÖS0 S E M I C O N D S / ICS GQ03Sb4 4 ■ 93D 03 56 4D BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain 'cBO 100 100 2000


    OCR Scan     		PDF GQ03Sb4 THG6222 THC6224 THC6426 THC6427 THC6428 THC6429 THC6714 B--05 t3d 18

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


    OCR Scan     		PDF 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


    OCR Scan     		PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644

    BSY73

    Abstract: BSY89 BFY39 BSY41 BFX93 BFY76 BFY77 BSW19 BSW19A BSW20
    Text: T YPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers Pd mW 'c Im A I V C EO (V ) FE V C E (S A T ) min max •c Im A I V CE (V ) 0.01 0.01 5 5 BFX93 BFX93 N N TO-18 TO-18 300 300 30 30 45 45 40 100 120 300 BFY39 BFY76 BFY77 N N N TO-18 TO-18


    OCR Scan     		PDF BFX93 BFY39 BFY76 BFY77 BSW19 BSW19A BSW20 O-92F BSW20A BSY73 BSY89 BSY41

    MPS2712C

    Abstract: MPS2714C MPS2716C THC6222 THC6224 THC6426 THC6427 THC6428 THC6429 THC6714
    Text: ALLEGRO 8514019 MICROSYSTEMS SPRAGUE. INC T3 0SG433Ô D SEMIC ONDS/ ICS 93D GGG35b4 3 • AL6R 0 3 5643> BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain •cBO 100 100 500 500 100 100


    OCR Scan     		PDF 0S0M33Ã 0003SbM THC6222 THC6224 THC6426 THC6427 MPS3393C MPS3394C MPS3395C MPS3396C MPS2712C MPS2714C MPS2716C THC6428 THC6429 THC6714

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


    OCR Scan     		PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    MPS3391

    Abstract: MPS930A MPS3390 MPS929 61807 MPS930 2N3903 MPS3396 MPS3397 MPS3398
    Text: MOTOROLA SC ÎXSTRS/R 6367254 FJ ôF|t.3b?as4 0 Dfli?bb a J ~ MOTOROLA SC XSTRS/R 96D 8 1 7 6 6 F M A X IM U M R A T IN G S Sym bol Rating MPS929 MPS930A 45 U nit Vdc Collector-Em itter Voltage VCEO Collector-Base Voltage VcBO 45 60 Vdc Emitter-Base Voltage


    OCR Scan     		PDF MPS929 MPS930A MPS930A MPS3391 MPS3390 61807 MPS930 2N3903 MPS3396 MPS3397 MPS3398

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N577

    Abstract: MP03725 8VC80
    Text: I DEVICE TYPE PA C K A G E BVC EO 8VC 8 0 BVEBO 1CBO 9 VCB IV I M IN IV I M IN V I M IN |m A | MAX IV HFE M IN MAX VC 4 1C (V I 1 —A 1 FT COB (p li M A * (M H / I 2N5355 2N5365 2N 5366 2N5400 2N5401 PN P PNP PN P PNP PNP TO-92 TO-92 TO-92 TO-92 TO-92


    OCR Scan     		PDF 2N5355 2N5365 2N5400 2N5401 2N5447 2N5448 2N5449 2N5450 2N545I MPS3395 2N577 MP03725 8VC80

    sC3228

    Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
    Text: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB


    OCR Scan     		PDF 15514CHb 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 O-237 sC3228 BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416

    Untitled

    Abstract: No abstract text available
    Text: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF 0SGM33Ô MPS2712 MPS2714 MPS2716 MPS2923 MPS2924 MPS2925 MPS2926 MPS3390 MPS3391

    BC546 IC

    Abstract: KM901
    Text: Low Level and General Purpose Amplifiers TYPE NO. POLA­ RITY MAXIMUM RATINGS CASE Pd Ic V ceo m W (mA) (V ) Hj E min max ^CE(sat) fr min max (mA) (MHz) (MHz) N.F. max (dB) 150 150 150 4.5 4.5 4.5 10 10 4 Ic VcE max (mA) (V ) (V ) C 0b Ic BC45Î BC452 BC453


    OCR Scan     		PDF BC452 BC453 BC454 BC455 BC456 BC478 BC479 BC546 BC547 BC548 BC546 IC KM901

    BC286

    Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
    Text: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l


    OCR Scan     		PDF 2S14096 2N1507 2N1566 2N1613 2NI711 2N1889 2N1890 2N1893 2N1973 2N1974 BC286 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901

    Untitled

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers TYPE NO. CASE BSX38 BSX51 BSX51A BSX51B BSX52 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 345 300 300 300 300 100 200 200 200 200 30 .25 50 60 25 100 75 50 75 180 BSX52A BSX52B BSY41 BSY72 BSY73 N N P N N TO-18 TO-18 TO-18


    OCR Scan     		PDF BSX38 BSX51 BSX51A BSX51B BSX52 BSX52A BSX52B BSY41 BSY72 BSY73