SMD 7150
Abstract: 57034 57Z30 IRHN SMD23 7130
Text: Rad Hard MOSFET Reference Guide NEW Mega Rad Product Matrix IRHNJ SMD-.5 IRHF TO39 IRH TO3 IRHM TO254 IRHG IRHQ MO036AB LCC 28 HEX BVDSS VOLTS 1 100 1 100 7110 1 200 7210 1 250 3 30 57Z30* 57Z30* 57Z30* 57Z30* 3 60 57034* 57034* 57034* 57034* 3 100 57130*
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MO036AB
57Z30*
57Z60*
300K-Rad
7310SE
57230SE*
7330SE
SMD 7150
57034
57Z30
IRHN
SMD23
7130
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2n7612
Abstract: 4.5V to 100v input regulator
Text: PRELIMINARY PD-97178 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω
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PD-97178
MO-036AB)
IRHLG77110
IRHLG73110
2N7612M1
MO-036AB
MIL-STD-750,
MlL-STD-750,
2n7612
4.5V to 100v input regulator
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRHG6110
Abstract: IRHG63110 MO-036AB
Text: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω
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93783E
IRHG6110
MO-036AB)
IRHG63110
MIL-STD-750,
MlL-STD-750,
267mH,
IRHG6110
IRHG63110
MO-036AB
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IR2110
Abstract: IR2110S IR2113L6 IRFBC20 IRFBC30 IRFBC40 IRFPE50 MO-036AB
Text: PD - 91883 IR2113L6 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels
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IR2113L6
IR2113L6
IR2110
IR2110S
IRFBC20
IRFBC30
IRFBC40
IRFPE50
MO-036AB
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IRHG9110
Abstract: IRHG93110 MO-036AB
Text: PD - 93819B IRHG9110 100V, QUAD P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036AB RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHG9110 100K Rads (Si) 1.1Ω IRHG93110 300K Rads (Si) 1.1Ω ID -0.75A
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93819B
IRHG9110
MO-036AB)
IRHG93110
MO-036AB
267mH,
-100V,
MIL-STD-750,
MlL-STD-750,
IRHG9110
IRHG93110
MO-036AB
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IRHG593110
Abstract: IRHG597110 MO-036AB
Text: PD - 94431 IRHG597110 RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036AB 100V, Quad P-CHANNEL RAD-Hard HEXFET 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHG597110 100K Rads (Si) 0.96Ω -0.96A IRHG593110 300K Rads (Si)
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IRHG597110
MO-036AB)
IRHG597110
IRHG593110
MO-036AB
430mH,
-100V,
MIL-STD-750,
MlL-STD-750,
MO-036AB
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IRFG110
Abstract: JANTX2N7334 JANTXV2N7334 MO-036AB
Text: PD-90396H POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International
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PD-90396H
MO-036AB)
IRFG110
JANTX2N7334
JANTXV2N7334
MIL-PRF-19500/597
150mH
MO-036AB
IRFG110
JANTX2N7334
JANTXV2N7334
MO-036AB
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Untitled
Abstract: No abstract text available
Text: PD-93921D RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage
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PD-93921D
RIC7113L4
RIC7113L4
MO-036AB
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2N7334
Abstract: 2N7334 JANTX
Text: 2N7334 Qualified Levels: JAN, JANTX, and JANTXV QUAD N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/597 DESCRIPTION This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage
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2N7334
MIL-PRF-19500/597
2N7334
MIL-PRF-19500/597.
MO-036AB
T4-LDS-0212,
2N7334 JANTX
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IR2110L6
Abstract: IRFBC20 IRFBC30 IRFBC40 IRFPE50 MO-036AB
Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.074 IR2110L6 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V
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IR2110L6
IR2110L6
IRFBC20
IRFBC30
IRFBC40
IRFPE50
MO-036AB
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Untitled
Abstract: No abstract text available
Text: PD-60085B IR2110L4 Features HIGH AND LOW SIDE DRIVER n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels
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PD-60085B
IR2110L4
120ns
IR2110L4
MO-036AB
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PD-95865B 2N7618M1 IRHLG770Z4 60V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6Ω 1.07A IRHLG730Z4 300K Rads (Si)
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PD-95865B
2N7618M1
IRHLG770Z4
MO-036AB)
IRHLG770Z4
IRHLG730Z4
MO-036AB
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PD-97178 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω
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PD-97178
2N7612M1
IRHLG77110
MO-036AB)
IRHLG73110
MO-036AB
MIL-STD-750,
MlL-STD-750,
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IRHG3110
Abstract: IRHG4110 IRHG7110 IRHG8110 MO-036AB
Text: PD - 90670A IRHG7110 100V, QUAD N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036AB RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHG7110 100K Rads (Si) 0.6Ω IRHG3110 300K Rads (Si) 0.6Ω IRHG4110
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0670A
IRHG7110
MO-036AB)
IRHG3110
IRHG4110
IRHG8110
1000K
112mH,
MIL-STD-750,
IRHG3110
IRHG4110
IRHG7110
IRHG8110
MO-036AB
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Untitled
Abstract: No abstract text available
Text: 2N7335 Qualified Levels: JAN, JANTX, and JANTXV QUAD P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/599 DESCRIPTION This 2N7335 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage
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2N7335
MIL-PRF-19500/599
2N7335
MO-036AB
2N7335.
MIL-PRF-19500/599.
T4-LDS-0215,
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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Untitled
Abstract: No abstract text available
Text: PD - 90397F POWER MOSFET THRU-HOLE MO-036AB IRFG9110 JANTX2N7335 JANTXV2N7335 REF:MIL-PRF-19500/599 100V, QUAD P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG9110 RDS(on) I D 1.4Ω -0.75A HEXFET® MOSFET technology is the key to International
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90397F
MO-036AB)
IRFG9110
JANTX2N7335
JANTXV2N7335
MIL-PRF-19500/599
IRFG9110
266mH
-100V,
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transistor BC 458
Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and
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MS011795
transistor BC 458
transistor BC 945
ac 1084
transistor bc 577
Transistor BC 585
MS-015-AB
TRANSISTOR A42
bd 743 transistor
uA109
CA 358 AE
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vp22
Abstract: No abstract text available
Text: International Government and Space Products I8R Rectifier Control Integrated Circuits Part Number VS Offset VBS, VCC IOUT Supply Voltage Supply Voltage Sink. Source V (AJ •> (V| Fax on Demand Number High & Low Side Driver LCC I R 2 I I0 E 4 -4 t o 400
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MO-036AB
601KSJ
M0-036AA
2130D
MO-Q38AB
44-Lead
vp22
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305j
Abstract: MO-036AB
Text: Case Outline and Dimensions - MO-036AB CIC LEAD o A S S IG N M E N T S Q CO to > i= o zn C/1 O > o A 14 s i-r o 13 .2 S O o 14X 0"- 15* 7 .6 2 NOTES: 1. D IMENSIONING & T O L E E A N C IN G EEE A S M E Y 1 4 . 5 M - 1 9 9 4 . CO N TEO LLING DIMENSION: INCH.
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MO-036AB
5M-1994.
M0-036AB.
305j
MO-036AB
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IRHG7110
Abstract: MO-036AB 31VDS
Text: uaia aieei no. ku-s .ö/ua INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG711Q N-CHANNEL RAD HARD 100 Volt, 0.70®, RAD HARD HEXFET Product Summary international Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRHG711Q
1x10s
1x1012
H-184
IRHG7110
H-185
MO-036AB
31VDS
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IRGAC50
Abstract: MO036AA IRGAC50U IRGAC50F
Text: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)
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IR2110E
IR2110E6
IR2110L
IR2110L6
IR2125Z
10to20
250mA
IRGAC50
MO036AA
IRGAC50U
IRGAC50F
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irfm9034
Abstract: No abstract text available
Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel
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IRFAF30
IRFAF40
IRFAF50
IRFAG30
IRFAG40
IRFAG50
IRF9130
JANTX2N6804
JANTXV2N6804
IRF9140
irfm9034
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