IRHG6110
Abstract: IRHG63110 MO-036AB
Text: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω
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Original
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93783E
IRHG6110
MO-036AB)
IRHG63110
MIL-STD-750,
MlL-STD-750,
267mH,
IRHG6110
IRHG63110
MO-036AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω
|
Original
|
93783E
IRHG6110
MO-036AB)
IRHG63110
MIL-STD-750,
MlL-STD-750,
267mH,
|
PDF
|