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    MMBR911L Search Results

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    MMBR911L Price and Stock

    Motorola Mobility LLC MMBR911LT1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MMBR911LT1 750 7
    • 1 -
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    • 100 $0.4875
    • 1000 $0.24
    • 10000 $0.24
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    Motorola Semiconductor Products MMBR911LT1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MMBR911LT1 279
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    Quest Components MMBR911LT1 600
    • 1 $1
    • 10 $1
    • 100 $0.5
    • 1000 $0.3
    • 10000 $0.3
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    Component Electronics, Inc MMBR911LT1 186
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    Motorola Semiconductor Products MMBR911L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MMBR911L 265
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    MMBR911L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBR911LT1 Advanced Power Technology RF & MICROWAVE TRANSISTOR Original PDF
    MMBR911LT1 Microsemi Bipolar/LDMOS Transistor Original PDF
    MMBR911LT1 Motorola Silicon NPN Transistor Original PDF
    MMBR911LT1G Advanced Power Technology NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR Original PDF

    MMBR911L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


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    PDF MMBR911LT1 MMBR911LT1 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com


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    PDF MMBR911LT1 MMBR911LT1 OT-23 MMBR911MLT1

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: MMBR911LT1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MMBR911LT1 Freescale Semiconductor, Inc. ARCHIVE INFORMATION • High Gain–Bandwidth Product fT = 7.0 GHz Typ @ 30 mA


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    PDF MMBR911LT1/D MMBR911LT1 A/500 RF NPN POWER TRANSISTOR 2.5 GHZ MMBR911LT1

    motorola J50

    Abstract: sot-23 MARKING GU MMBR911LT1 NF 034 transistor motorola 246 033 motorola
    Text: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MMBR911LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This


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    PDF MMBR911LT1/D MMBR911LT1 A/500 motorola J50 sot-23 MARKING GU MMBR911LT1 NF 034 transistor motorola 246 033 motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as


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    PDF MMBR911LT1/D MMBR911LT1 MPS911 226AA A/500 MMBR911LT1 MMBR911LT1/D*

    MMBR911LT1

    Abstract: MMBR911LT1G
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MMBR911LT1 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR MMBR911LT1G * G Denotes RoHS Compliant, Pb Free Terminal Finish DESCRIPTION: Designed for low noise, wide dynamic range front–end amplifiers and


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    PDF MMBR911LT1 MMBR911LT1G A/500 MMBR911LT1 MMBR911LT1G

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MMBR911L Silicon NPN RF Transistor DESCRIPTION • High Gain GNF = 17 dB TYP. @ lc= 10 mA, f = 500 MHz • Low Noise Figure NF= 1.7dB TYP. @ f= 500 MHz


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    PDF MMBR911L OT-23

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MMBR911LT1 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR MMBR911LT1G * G Denotes RoHS Compliant, Pb Free Terminal Finish DESCRIPTION: Designed for low noise, wide dynamic range front–end amplifiers and


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    PDF MMBR911LT1 MMBR911LT1G A/500

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    MMBR911LT1

    Abstract: MMBR911MLT1
    Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package


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    PDF MMBR911MLT1 MMBR911MLT1 MMBR911LT1 MMBR911LT1

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


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    PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    BC548 TRANSISTOR REPLACEMENT

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    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    MPS911

    Abstract: 75RC tjm sot23 MBR911 2223 TO-92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors D esigned for low noise, w ide dyn a m ic range fro n t-e n d am p lifie rs and low -noise VCO's. Available in a surface-m ountable plastic package, as well as


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    PDF MMBR911LT1 MPS911 75RC tjm sot23 MBR911 2223 TO-92

    B755

    Abstract: MPS911
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO's. Available in a surface-mountable plastic package, as well as the popular TO-226AA TO-92 package. This Motorola series of small-signal


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    PDF O-226AA A/500 MMBR911LT1 MPS911 b3b7E54 B755

    MMBR920

    Abstract: No abstract text available
    Text: MMBR911L See MPS911 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MMBR920L The RF Line IMPIM Silicon High Frequency Transistor . . . designed fo r th ick and th m -film circu its u sing surface m o u n t c o m p o ­ nents and re q u irin g low -n oise , h ig h -g ain signal a m p lific a tio n at frequencies


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    PDF MMBR911L MPS911) MMBR920L MMBR920

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    c 4235 transistor npn

    Abstract: transistor c 4236
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO's. Available in a surface-mountable plastic package. This Motorola small-signal plastic transistor offers superior quality and performance


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    PDF A/500 MMBR911LT1 c 4235 transistor npn transistor c 4236

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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