k60 diode
Abstract: ML64114R ML6XX14 mitsubishi photodiode
Text: MITSUBISHI LASER DIODES ML6XX14 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION ML6XX14 series are high power AIGaAs semiconductor laser • O u tp u t 50mW CW 60mW (pulse) diodes • S h o r t astigmatic distance w hich provides a stable, single
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ML6XX14
785nm
jL20mW
k60 diode
ML64114R
mitsubishi photodiode
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785nm mitsubishi
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML6XX14 SERIES AIGaAs LASER DIODES TYPE NAME DISCRIPTION FEATURES ML6XX14 series are high power AIGaAs semiconductor laser • O u tp u t 50mW CW 60mW (pulse) diodes • S h o r t astigmatic distance which provides a stable, single
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OCR Scan
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PDF
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ML6XX14
785nm
785nm mitsubishi
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML6XX14 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION ML6XX14 series are high power AIGaAs semiconductor laser • O u tp u t 50mW CW 60mW (pulse) diodes • S h o r t astigmatic distance which provides a stable, single
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OCR Scan
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PDF
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ML6XX14
785nm
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML6XX14 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION ML6XX14 series are high power AIGaAs semiconductor laser • O u tp u t 50mW CW 60mW (pulse) diodes • S h o r t astigmatic distance which provides a stable, single
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OCR Scan
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PDF
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ML6XX14
785nm
ML6XX14
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ml976h6f
Abstract: No abstract text available
Text: 1 OPTICAL ELEMENTS ILASER DIODES Max. ratings Type No, Application Tc Tsto re i i*C lop Vop *P mA) (V) (nm) ODD 35 -40 to + 60 -40 to + 100 M L4XX23 LBP .5 -40 to + 60 M L4XX26 LBP 8 M L 6 X X I4 ODD M L6XX15 M L6XX16 (mWi sa 9X fdeoì Wagi tm * 2 (mA) typ
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L4XX23
L601I5R
ML60116R
ML64116R
ML60120R
L61120
PD7006
PD7869
PD8933
ML7XX10
ml976h6f
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