Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC39V7177 Search Results

    SF Impression Pixel

    MGFC39V7177 Price and Stock

    Mitsubishi Electric MGFC39V7177A-56

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V7177A-56 42
    • 1 $139.1528
    • 10 $118.2799
    • 100 $111.3222
    • 1000 $111.3222
    • 10000 $111.3222
    		Buy Now

    Mitsubishi Electric MGFC39V7177-01

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V7177-01 4
    • 1 $220.5
    • 10 $220.5
    • 100 $220.5
    • 1000 $220.5
    • 10000 $220.5
    		Buy Now

    MGFC39V7177 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGFC39V7177 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V7177 Unknown FET Data Book Scan PDF
    MGFC39V7177A Mitsubishi 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V7177A Mitsubishi 7.1-7.7GHz BAND 8W Internally Matched GaAs FET Scan PDF

    MGFC39V7177 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC39V7177A

    Abstract: 71F71
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71

    MGFC39V7177A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7177A MGFC39V7177A 28dBm 10MHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7177A MGFC39V7177A -45dBc 28dBm

    AN rf power amplifier

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7177A MGFC39V7177A -45dBc 28dBm AN rf power amplifier

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V7177A • tftwW gxs Wifi Si>n'K 7 .1 — 7.7GHz BAND 8W INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers* The hermetically sealed metal-ceramic


    OCR Scan     		PDF FC39V7177A MGFC39V7177A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC39V 7177 7.1~ 7.7GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF 6FC39V MGFC39V7177 Item-01: Item-51: 27C102P, RV-15 16-BIT)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177 7 .1 —7.7GHZ BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFC39V7177

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> „OJ»«*"*'' So«'* MGFC39V7177A p^ 1 7 .1 — 7 .7 G H z BAND 8 W IN TER N A LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 7 .1 —7 . 7


    OCR Scan     		PDF MGFC39V7177A

    MGFC39V7177A

    Abstract: MGFC39V7177
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A p ftE U ' . N o t,t .» n n ß . . "XVi'S's T il<5 » n o t ï f ï ,ts 8f s c 7 .1 — 7 .7 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET .-,.a O 'e t ! , c DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d


    OCR Scan     		PDF MGFC39V7177A MGFC39V7177A ltem-01: MGFC39V7177

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MINA?* p R Ö MGFC39V7177A - ' y. «'-' f ;«ep^^ e ° ‘ 7 .1 -7 .7 G H * BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 9 V 7 1 7 7 A is an internally im ped an ce-m atched GaAs power F E T especially designed for use in 7 . 1 —7 .7


    OCR Scan     		PDF MGFC39V7177A

    MGF4404A

    Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
    Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D


    OCR Scan     		PDF MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045

    mgfc30

    Abstract: MGFC39V5964A
    Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10


    OCR Scan     		PDF MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 mgfc30 MGFC39V5964A