Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC39V5258 Search Results

    MGFC39V5258 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC39V5258 Mitsubishi 5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V5258 Mitsubishi 5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC39V5258 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V5258 Unknown FET Data Book Scan PDF
    MGFC39V5258A Mitsubishi 5.2-5.8 GHz band 8W internally matched GaAs FET Scan PDF

    MGFC39V5258 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mitsubishi

    Abstract: 5.8GHz MGFC39V5258
    Text: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5258 5.2 ~ 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFC39V5258 mitsubishi 5.8GHz MGFC39V5258

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V5258 5.2 – 5.8 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V5258 MGFC39V5258

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V5258 5.2 – 5.8 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V5258 MGFC39V5258

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


    OCR Scan     		PDF

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445

    MGF4404A

    Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
    Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D


    OCR Scan     		PDF MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045

    I8155

    Abstract: MGFC39V4450-51 MGFC39V7177-01
    Text: ^M ITSUBISHI MGFC39VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC39VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50Q • High output power


    OCR Scan     		PDF MGFC39VXXXX MGFC39VXXXX MGFC39V5258-01 MGFC39V5258-51 MGFC39V5964-01 MGFC39V5964-51 MGFC39V6471-01 MGFC39V6471-51 MGFC39V7177-01 MGFC39V7177-51 I8155 MGFC39V4450-51