MGFC39 Search Results
MGFC39 Price and Stock
Mitsubishi Electric MGFC39V7785A-56 |
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MGFC39V7785A-56 | 54 |
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Mitsubishi Electric MGFC39V6472A-56 |
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MGFC39V6472A-56 | 10 |
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Mitsubishi Electric MGFC39V5964A-61C BAND, GAAS, N-CHANNEL, RF POWER, JFET |
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MGFC39V5964A-61 | 101 |
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Mitsubishi Electric MGFC39V7177A-56 |
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MGFC39V7177A-56 | 42 |
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Mitsubishi Electric MGFC39V7177-01 |
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MGFC39V7177-01 | 4 |
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MGFC39 Datasheets (35)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
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| MGFC39V3436 |
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3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V3436 |
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3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V3436A |
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3.4-3.6 GHz band 4W internally matched GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V3742 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V3742 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V3742A |
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3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V3742A |
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3.7-4.2 BAND 8W Internally Matched GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V4450 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V4450 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V4450A |
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4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V4450A |
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4.4-5.0 GHz Band 8W Internally Matched GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5053 |
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FET, ID 7.5 A | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5258 |
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5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5258 |
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5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| MGFC39V5258 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5258 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5258A |
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5.2-5.8 GHz band 8W internally matched GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5867 |
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Scan | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5964 |
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5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC39V5964 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MGFC39 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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MGFC39V5964AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC39V5964A MGFC39V5964A 28dBm 10MHz June/2004 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39 V 7785A e h « "* r\f! No««* " ' ”mew clW s=^<>8ton’ 7 .7 — 8 .5 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 7 8 5 A is a n in te rn a lly im p e d a n c e -m a t c h e d |
OCR Scan |
MGFC39 | |
MGFC39V5867Contextual Info: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8 ~ 6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
Original |
June/2004 MGFC39V5867 75GHz MGFC39V5867 | |
MGFC39V3436Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC39V3436 MGFC39V3436 28dBm Oct-03 | |
fet 544 a
Abstract: MGFC39V6471
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OCR Scan |
39V6471 MGFC39V6471 fet 544 a | |
MGFC39V3742AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC39V3742A MGFC39V3742A 28dBm 10MHz | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC39V4450A 4.4 – 5.0 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC39V4450A MGFC39V4450A -45dBc 28dBm | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC39V3436 MGFC39V3436 -45dBc 28dBm | |
MGFC39V7177A
Abstract: 71F71
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Original |
MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71 | |
MGFC39V7785AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC39V7785A MGFC39V7785A 28dBm 10MHz | |
MGFC39V6472AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V6472A 6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability. |
Original |
MGFC39V6472A MGFC39V6472A 28dBm 10MHz June/2004 | |
MGFC39V5867
Abstract: 68 0063
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OCR Scan |
MGFC39V5867 75GHz MGFC39V5867 39dBm RG-50 Ta-25deg 68 0063 | |
GF-8
Abstract: MGFC39V3436
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Original |
MGFC39V3436 MGFC39V3436 18-Sep- GF-8 | |
049 MAKINGContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic |
OCR Scan |
MGFC39V3436 MGFC39V3436 -45dBc 28dBm 25deg 18-Sep- 049 MAKING | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785 7.7 ~ 8 .5 G H z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit, millimeters inches The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8.5 |
OCR Scan |
MGFC39V7785 27C102P, RV-15 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC39V 7177 7.1~ 7.7GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic |
OCR Scan |
6FC39V MGFC39V7177 Item-01: Item-51: 27C102P, RV-15 16-BIT) | |
mgfc39v5964Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The MGFC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic |
OCR Scan |
GFC39V5964 MGFC39V5964 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177 7 .1 —7.7GHZ BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7 G H z band amplifiers. The herm etically sealed metal-ceramic |
OCR Scan |
MGFC39V7177 | |
MGFC39V4450AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V4450A 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC39V4450A MGFC39V4450A 28dBm 10MHz | |
MGFC39V6472AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V6472A 6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC39V6472A MGFC39V6472A 28dBm 10MHz | |
mitsubishi
Abstract: 5.8GHz MGFC39V5258
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Original |
MGFC39V5258 mitsubishi 5.8GHz MGFC39V5258 | |
MGFC39V3436Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC39V3436 MGFC39V3436 28dBm June/2004 | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC39V3436 MGFC39V3436 -45dBc 28dBm | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC39V6472A 6.4 – 7.2 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC39V6472A MGFC39V6472A -45dBc 28dBm | |