MGFC38V6472 Search Results

MGFC38V6472 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MGFC38V6472		Mitsubishi	6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC38V6472		Mitsubishi	6.4-7.2 GHz BAND 6W Internally Matched GaAs FET		Scan	PDF

MGFC38V6472 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Mitsubishi Abstract: MGFC38V6472 Text: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V6472 6.4 ~ 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC	Original	PDF	MGFC38V6472 Mitsubishi MGFC38V6472
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC38V6472 MGFC38V6472 -45dBc 27dBm 10ctric
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC38V6472 MGFC38V6472 -45dBc 27dBm
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V6472 6 .4 —7.2G Hz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 6 .4 - 7 . 2 GHz band am plifiers. The herm etically sealed m etal-ceramic	OCR Scan	PDF	MGFC38V6472
3642G Abstract: No abstract text available Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m	OCR Scan	PDF