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Flip Electronics MCH3312-TL-E P-CHANNEL MOSFET FOR ULTRA-HIGH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCH3312-TL-E	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.13	Buy Now
Rochester Electronics LLC MCH3312-EBM-TL-E PCH 4V DRIVE SERIES
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DigiKey	MCH3312-EBM-TL-E	Bulk			2,664	1 - 10 - 100 - 1000 - 10000 $0.11	Buy Now
onsemi MCH3312-TL-E Transistor MOSFET P-Channel Enhancement 30V 2A 3-Pin Surface Mount - Tape and Reel (Alt: MCH3312-TL-E)
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Avnet Americas	MCH3312-TL-E	Reel		0 Weeks, 2 Days	5,264	1 - 10 - 100 - 1000 - 10000 $0.12439	Buy Now
Rochester Electronics	MCH3312-TL-E		165,000		1	1 $0.1517 10 $0.1517 100 $0.1426 1000 $0.1289 10000 $0.1289	Buy Now
Flip Electronics	MCH3312-TL-E		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MCH3312-EBM-TL-E PCH 4V DRIVE SERIES '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MCH3312-EBM-TL-E		24,000		1	1 $0.1083 10 $0.1083 100 $0.1018 1000 $0.0921 10000 $0.0921	Buy Now
onsemi MCH3312EBMTLE P-CHANNEL SILICON MOSFET FOR ULTRAHIGH-SPEED SWITCHING APPLICATIONS Small Signal Field-Effect Transistor
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ComSIT USA	MCH3312EBMTLE		102,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MCH3312 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MCH3312		Sanyo Semiconductor	P-Channel Silicon MOSFET		Original	PDF

MCH3312 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)	Original	ENN7702 CPH5822 MCH3312) SBS010M)	PDF
diode N1004 Abstract: CPH5822 MCH3312 N1004 SBS010M Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)	Original	CPH5822 ENN7702A MCH3312) SBS010M) diode N1004 CPH5822 MCH3312 N1004 SBS010M	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171	Original	ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]	PDF
82306 Abstract: MCH3312 CPH5852 SB1003M3 Text: CPH5852 Ordering number : ENA0336 SANYO Semiconductors DATA SHEET CPH5852 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),	Original	CPH5852 ENA0336 MCH3312) SB1003M3) A0336-6/6 82306 MCH3312 CPH5852 SB1003M3	PDF
MCH3312 Abstract: marking JM Text: Ordering number : ENN7009 MCH3312 P-Channel Silicon MOSFET MCH3312 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167A [MCH3312] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65	Original	ENN7009 MCH3312 MCH3312] MCH3312 marking JM	PDF
CPH5821 Abstract: MCH3312 SBS004 marking qx Text: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)	Original	CPH5821 ENN7701 MCH3312) SBS004) CPH5821 MCH3312 SBS004 marking qx	PDF
MCH3312 Abstract: CPH5854 SB1003M3 A05166 marking YG Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),	Original	CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG	PDF
ENN8206 Abstract: CPH5810 MCH3312 Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)	Original	CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENN7009 MCH3312 MCH3312 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167A [MCH3312] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65	Original	ENN7009 MCH3312 MCH3312] MCH3312/D	PDF
on line ups circuit diagrams Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04 Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm	Original	EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04	PDF
W507 Abstract: FW507 MCH3312 SB1003M Text: FW507 注文コード No. N 8 4 0 3 三洋半導体データシート N FW507 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード汎用スイッチングデバイス特長・低オン抵抗超高速スイッチング、低電圧駆動の P チャネル MOS 形電界効果トランジスタと逆回復時間が短く、	Original	FW507 FW507 MCH3312 SB1003M 3000mm2 81205PA TB-00001717 IT08184 W507 MCH3312 SB1003M	PDF
CPH5804 Abstract: MCH3312 SBS006M IT03222 Text: 注文コード No. N 6 9 8 0 CPH5804 No. N 6 9 8 0 62001 新 CPH5804 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用・P チャネル MOS 形電界効果トランジスタ	Original	CPH5804 MCH3312) SBS006M 600mm2 IT00633 IT00632 IT00634 IT00635 CPH5804 MCH3312 SBS006M IT03222	PDF
CPH5810 Abstract: MCH3312 Text: CPH5810 注文コード No. N 8 2 0 6 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5810 汎用スイッチングデバイス特長・P チャネル MOS 形電界効果トランジスタ（MCH3312）	Original	CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312	PDF
CPH5821 Abstract: MCH3312 SBS004 Text: CPH5821 注文コード No. N 7 7 0 1 三洋半導体データシート N CPH5821 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード汎用スイッチングデバイス特長・DC / DC コンバータ用。	Original	CPH5821 MCH3312) SBS004 600mm2 TA-100874 IT00622 IT00623 CPH5821 MCH3312	PDF

1h223K Abstract: C3216JB 1H102K 1H103K 1H104K C1608JB PR0816P MB39A 132 MCH3308 C1608CH Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71109-1Ea ASSP for Power Supply Applications Evaluation Board MB39A112 • DESCRIPTION The MB39A112 evaluation board is a surface mount circuit board with 3 channels of down conversion circuit. This evaluation board outputs voltage of 1.2 V, 3.3 V and 5.0 V from the output terminals of 3 systems, and	Original	DS04-71109-1Ea MB39A112 MB39A112 1h223K C3216JB 1H102K 1H103K 1H104K C1608JB PR0816P MB39A 132 MCH3308 C1608CH	PDF
CPH5854 Abstract: MCH3312 SB1003M3 A0516 Text: CPH5854 注文コード No. N A 0 5 1 6 三洋半導体データシート N CPH5854 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード汎用スイッチングデバイス特長・P チャネル MOS 型電界効果トランジスタ（MCH3312 とショットキバリアダイオード（SB1003M3）	Original	CPH5854 MCH3312) SB1003M3 600mm2 90606PE TC-00000163 A0516-1/5 IT09554 CPH5854 MCH3312 A0516	PDF
MCH3312 Abstract: A916CY-2R0M A916CY-3R3M MB39A112 MCH3308 SBE001 VT100 MB39A112PFT RR0816P222D amplifer pch Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27239-1E ASSP For Power Supply Applications General-Purpose DC/DC Converter 3-ch DC/DC Converter IC MB39A112 • DESCRIPTION The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is	Original	DS04-27239-1E MB39A112 MB39A112 TSSOP-20P F0311 MCH3312 A916CY-2R0M A916CY-3R3M MCH3308 SBE001 VT100 MB39A112PFT RR0816P222D amplifer pch	PDF
Untitled Abstract: No abstract text available Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27239-1Ea ASSP For Power Supply Applications General-Purpose DC/DC Converter 3-ch DC/DC Converter IC MB39A112 • DESCRIPTION The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is	Original	DS04-27239-1Ea MB39A112 MB39A112 TSSOP-20P	PDF
Untitled Abstract: No abstract text available Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion	Original		PDF
TA 8403 A Abstract: w507 FW507 MCH3312 SB1003M Text: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and	Original	FW507 ENN8403 FW507 MCH3312 SB1003M TA 8403 A w507	PDF
RR0816P222D Abstract: A916CY-3R3M A916CY-2R0M MB39A112 MCH3308 MCH3312 SBE001 VT100 constant current power supply circuit schematic Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27239-1Ea ASSP For Power Supply Applications General-Purpose DC/DC Converter 3-ch DC/DC Converter IC MB39A112 • DESCRIPTION The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is	Original	DS04-27239-1Ea MB39A112 MB39A112 TSSOP-20P RR0816P222D A916CY-3R3M A916CY-2R0M MCH3308 MCH3312 SBE001 VT100 constant current power supply circuit schematic	PDF
CPH5810 Abstract: MCH3312 Text: CPH5810 注文コード No. N 8 2 0 6 三洋半導体データシート N CPH5810 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード汎用スイッチングデバイス特長・P チャネル MOS 形電界効果トランジスタ（MCH3312）	Original	CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312	PDF
Untitled Abstract: No abstract text available Text: Ordering number: ENN6980 \| MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171	OCR Scan	ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]	PDF
Untitled Abstract: No abstract text available Text: Ordering number: ENN7009 P-Channel Silicon MOSFET MCH3312 SANYO Ultrahigh-Speed Switching Applications Package Dimensions Features • Low O N -resistance. unit : mm • Ultrahigh-speed switching. 2167A • 4V drive. [M C H 3 3 1 2 ] , Specifications 0.85	OCR Scan	ENN7009 MCH3312	PDF

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MCH3312 Price and Stock

Flip Electronics MCH3312-TL-E

Rochester Electronics LLC MCH3312-EBM-TL-E

onsemi MCH3312-TL-E

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onsemi MCH3312EBMTLE

MCH3312 Datasheets (1)

MCH3312 Datasheets Context Search

Untitled

diode N1004

Untitled

82306

MCH3312

CPH5821

MCH3312

ENN8206

Untitled

on line ups circuit diagrams

W507

CPH5804

CPH5810

CPH5821

1h223K

CPH5854

MCH3312

Untitled

Untitled

TA 8403 A

RR0816P222D

CPH5810

Untitled

Untitled